Browsing by Author "Bolat, Sami"

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Open Access
Digitally alloyed ZnO and TiO2 thin film thermistors by atomic layer deposition for uncooled microbolometer applications
(AVS Science and Technology Society, 2017) Tilkioğlu, Bilge T.; Bolat, Sami; Tanrıkulu, Mahmud Yusuf; Okyay, Ali Kemal
The authors demonstrate the digital alloying of ZnO and TiO2 via atomic layer deposition method to be utilized as the active material of uncooled microbolometers. Depositions are carried out at 200 °C. Crystallinity of the material is shown to be degraded with the increase of the Ti content in the grown film. A maximum temperature coefficient of resistance (TCR) of −5.96%/K is obtained with the films containing 12.2 at. % Ti, and the obtained TCR value is shown to be temperature insensitive in the 15-22 °C, thereby allowing a wide range of operation temperatures for the low cost microbolometers. © 2017 American Vacuum Society.
Open Access
Electrical properties and device applications of atomic layer deposited ZnO and GaN thin films
(2014) Bolat, Sami
Zinc oxide (ZnO), a semiconducting material with a wide band gap of 3.37 eV, has become a promising material for wide range of electronic and optoelectronic applications. One of the most important properties of this material is its large exciton binding energy of 60 meV, which makes ZnO a strong candidate for ultraviolet light emitting diodes and lasers. In addition, potentially high electron mobility and the transparency in the visible region strengthen the future of the ZnO based transparent electronics. Although several applications of ZnO have taken their places in the literature, use of ZnO in the thermal imaging applications is yet to be explored. In the parts of this thesis related to ZnO, the temperature coefficient of resistance and electrical noise together with resistivity and contact resistance properties of atomic layer deposition based ZnO are investigated. Due to its remarkably high temperature coefficient of resistance value and suitable 1/f noise corner frequency, this material is proposed as an alternative material to be used in the active layers of uncooled microbolometers. GaN is another wide gap semiconductor which has been intensely investigated throughout the last decades for its potential usage in both optical and electrical applications. Especially, high saturation velocity of the electric carriers of this material has made it a strong candidate to be used in high power applications. Furthermore the high electron mobility transistors based on the 2-dimensional electron gas region formed between the AlGaN and GaN, have found wide range of applications in radio frequency (RF) electronics area. Currently, most commonly used techniques for growing GaN, are metal organic chemical vapor deposition and molecular beam epitaxy. Both of these techniques offer single crystalline layers; however, the process temperatures used in the growth of the GaN disable the use of this material in low temperature flexible electronic/optoelectronic applications. In order to solve this problem, hollow cathode plasma assisted atomic layer deposition technique is utilized and GaN thin films with polycrystalline structures are successfully grown at 200°C. In the parts of this thesis related to GaN, the electrical properties, the effect of contact annealing on the resistivity of the GaN thin films and the contact resistance between this material and Ti/Au metallization scheme are investigated. Afterwards, we present the world’s first thin film transistor with atomic layer deposition based GaN channel and discuss its electrical characteristics in detail. Finally, the GaN thin film transistors are fabricated by performing all fabrication steps at temperatures below 250°C. This is the lowest process thermal budget for the GaN based thin film transistors reported so far. Electrical characteristics as well as the stability of the proposed device are investigated and the results obtained are discussed. Proposed devices are believed to pave the way for the GaN-based stable flexible/transparent electronics after further materials and process optimization.
Open Access
Hollow-cathode plasma-assisted atomic layer deposition: A novel route for low-temperature synthesis of crystalline III-nitride thin films and nanostructures
(IEEE, 2015) Bıyıklı, Necmi; Ozgit-Akgun, Çağla; Goldenberg, Eda; Haider, Ali; Kızır, Seda; Uyar, Tamer; Bolat, Sami; Tekcan, Burak; Okyay, Ali Kemal
Hollow cathode plasma-assisted atomic layer deposition is a promising technique for obtaining III-nitride thin films with low impurity concentrations at low temperatures. Here we report our efforts on the development of HCPA-ALD processes for III-nitrides together with the properties of resulting thin films and nanostructures. The content will further include nylon 6,6/GaN core/shell and BN/AlN bishell hollow nanofibers, proof-of-concept thin film transistors and UV photodetectors fabricated using HCPA-ALD-grown GaN layers, as well as early results for InN thin films deposited by HCPA-ALD technique. © 2015 IEEE.
Open Access
Terahertz Bandpass Frequency Selective Surfaces on Glass Substrates Using a Wet Micromachining Process
(Springer New York LLC, 2017) Ramzan, Mehrab; Khan, Talha Masood; Bolat, Sami; Nebioglu, Mehmet Ali; Altan, Hakan; Okyay, Ali Kemal; Topallı, Kağan
This paper presents terahertz (THz) frequency selective surfaces (FSS) implemented on glass substrate using standard microfabrication techniques. These FSS structures are designed for frequencies around 0.8 THz. A fabrication process is proposed where a 100-μm-thick glass substrate is formed through the HF etching of a standard 500-μm-thick low cost glass wafer. Using this fabrication process, three separate robust designs consisting of single-layer FSS are investigated using high-frequency structural simulator (HFSS). Based on the simulation results, the first design consists of a circular ring slot in a square metallic structure on top of a 100-μm-thick Pyrex glass substrate with 70% transmission bandwidth of approximately 0.07 THz, which remains nearly constant till 30° angle of incidence. The second design consists of a tripole structure on top of a 100-μm-thick Pyrex glass substrate with 65% transmission bandwidth of 0.035 THz, which remains nearly constant till 30° angle of incidence. The third structure consists of a triangular ring slot in a square metal on top of a 100-μm-thick Pyrex glass substrate with 70% transmission bandwidth of 0.051 THz, which remains nearly constant up to 20° angle of incidence. These designs show that the reflections from samples can be reduced compared to the conventional sample holders used in THz spectroscopy applications, by using single layer FSS structures manufactured through a relatively simple fabrication process. Practically, these structures are achieved on a fabricated 285-μm-thick glass substrate. Taking into account the losses and discrepancies in the substrate thickness, the measured results are in good agreement with the electromagnetic simulations. © 2017, Springer Science+Business Media New York.