Dual-color ultraviolet metal-semiconductor-metal AlGaN photodetectors

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage143503-3en_US
dc.citation.issueNumber14en_US
dc.citation.spage143503-1en_US
dc.citation.volumeNumber89en_US
dc.contributor.authorGökkavas, M.en_US
dc.contributor.authorBütün, S.en_US
dc.contributor.authorYu, H.en_US
dc.contributor.authorTut, T.en_US
dc.contributor.authorBütün, B.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2016-02-08T10:17:39Z
dc.date.available2016-02-08T10:17:39Z
dc.date.issued2006en_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.description.abstractBackilluminated ultraviolet metal-semiconductor-metal photodetectors with different spectral responsivity bands were demonstrated on a single Alx Ga1-x N heterostructure. This was accomplished by the incorporation of an epitaxial filter layer and the recess etching of the surface. The 11 nm full width at half maximum (FWHM) responsivity peak of the detector that was fabricated on the as-grown surface was 0.12 AW at 310 nm with 10 V bias, whereas the 22 nm FWHM responsivity peak of the detector fabricated on the recess-etched surface was 0.1 AW at 254 nm with 25 V bias. Both detectors exhibited excellent dark current characteristics with less than 10 fA leakage current. © 2006 American Institute of Physics.en_US
dc.identifier.doi10.1063/1.2358206en_US
dc.identifier.eissn1077-3118
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/11693/23694
dc.language.isoEnglishen_US
dc.publisherAIP Publishing LLCen_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.2358206en_US
dc.source.titleApplied Physics Lettersen_US
dc.subjectBias voltageen_US
dc.subjectEpitaxial filter layersen_US
dc.subjectFull width at half maximum (FWHM)en_US
dc.subjectSpectral responsivity bandsen_US
dc.subjectEtchingen_US
dc.subjectHeterojunctionsen_US
dc.subjectIlluminating engineeringen_US
dc.subjectLeakage currentsen_US
dc.subjectSemiconducting aluminum compoundsen_US
dc.subjectUltraviolet detectorsen_US
dc.subjectPhotodetectorsen_US
dc.titleDual-color ultraviolet metal-semiconductor-metal AlGaN photodetectorsen_US
dc.typeArticleen_US

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Institute of Materials Science and Nanotechnology (UNAM)
Department of Electrical and Electronics Engineering
Department of Physics