Dual-color ultraviolet metal-semiconductor-metal AlGaN photodetectors

Date
2006
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Source Title
Applied Physics Letters
Print ISSN
0003-6951
Electronic ISSN
1077-3118
Publisher
AIP Publishing LLC
Volume
89
Issue
14
Pages
143503-1 - 143503-3
Language
English
Type
Article
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Abstract

Backilluminated ultraviolet metal-semiconductor-metal photodetectors with different spectral responsivity bands were demonstrated on a single Alx Ga1-x N heterostructure. This was accomplished by the incorporation of an epitaxial filter layer and the recess etching of the surface. The 11 nm full width at half maximum (FWHM) responsivity peak of the detector that was fabricated on the as-grown surface was 0.12 AW at 310 nm with 10 V bias, whereas the 22 nm FWHM responsivity peak of the detector fabricated on the recess-etched surface was 0.1 AW at 254 nm with 25 V bias. Both detectors exhibited excellent dark current characteristics with less than 10 fA leakage current. © 2006 American Institute of Physics.

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Keywords
Bias voltage, Epitaxial filter layers, Full width at half maximum (FWHM), Spectral responsivity bands, Etching, Heterojunctions, Illuminating engineering, Leakage currents, Semiconducting aluminum compounds, Ultraviolet detectors, Photodetectors
Citation
Published Version (Please cite this version)