Dual-color ultraviolet metal-semiconductor-metal AlGaN photodetectors
Date
2006
Editor(s)
Advisor
Supervisor
Co-Advisor
Co-Supervisor
Instructor
BUIR Usage Stats
1
views
views
22
downloads
downloads
Citation Stats
Series
Abstract
Backilluminated ultraviolet metal-semiconductor-metal photodetectors with different spectral responsivity bands were demonstrated on a single Alx Ga1-x N heterostructure. This was accomplished by the incorporation of an epitaxial filter layer and the recess etching of the surface. The 11 nm full width at half maximum (FWHM) responsivity peak of the detector that was fabricated on the as-grown surface was 0.12 AW at 310 nm with 10 V bias, whereas the 22 nm FWHM responsivity peak of the detector fabricated on the recess-etched surface was 0.1 AW at 254 nm with 25 V bias. Both detectors exhibited excellent dark current characteristics with less than 10 fA leakage current. © 2006 American Institute of Physics.
Source Title
Applied Physics Letters
Publisher
AIP Publishing LLC
Course
Other identifiers
Book Title
Degree Discipline
Degree Level
Degree Name
Citation
Permalink
Published Version (Please cite this version)
Language
English