Dark current reduction in ultraviolet metal-semiconductor-metal photodetectors based on wide band-gap semiconductors

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage237en_US
dc.citation.spage236en_US
dc.contributor.authorBütün, Serkanen_US
dc.contributor.authorGökkavas, Mutluen_US
dc.contributor.authorYu, HongBoen_US
dc.contributor.authorStrupinski, Vlodeken_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.coverage.spatialBelek-Antalya, Turkey
dc.date.accessioned2016-02-08T12:24:53Z
dc.date.available2016-02-08T12:24:53Z
dc.date.issued2009-10en_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.descriptionDate of Conference: 4-8 Oct. 2009
dc.descriptionConference name: 2009 IEEE LEOS Annual Meeting Conference Proceedings
dc.description.abstractPhotodetectors on semi-insulating GaN templates were demonstrated. They exhibit lower dark current compared to photodetectors fabricated on regular GaN templates. Similar behavior observed in photodetectors fabricated on epitaxially thick SiC templates. © 2009 IEEE.en_US
dc.identifier.doi10.1109/LEOS.2009.5343292en_US
dc.identifier.issn1092-8081
dc.identifier.urihttp://hdl.handle.net/11693/28602
dc.language.isoEnglishen_US
dc.publisherIEEE
dc.relation.isversionofhttp://dx.doi.org/10.1109/LEOS.2009.5343292en_US
dc.source.title2009 IEEE LEOS Annual Meeting Conference Proceedingsen_US
dc.subjectGaN templateen_US
dc.subjectMetal semiconductor metal photodetectoren_US
dc.subjectSemi-insulating GaNen_US
dc.subjectWide-band-gap semiconductoren_US
dc.subjectGallium alloysen_US
dc.subjectGallium nitrideen_US
dc.subjectHeterojunctionsen_US
dc.subjectOptoelectronic devicesen_US
dc.subjectSemiconducting galliumen_US
dc.subjectSemiconducting gallium compoundsen_US
dc.subjectSilicon carbideen_US
dc.subjectPhotodetectorsen_US
dc.titleDark current reduction in ultraviolet metal-semiconductor-metal photodetectors based on wide band-gap semiconductorsen_US
dc.typeConference Paperen_US

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Department of Physics
Department of Electrical and Electronics Engineering
Institute of Materials Science and Nanotechnology (UNAM)
Nanotechnology Research Center (NANOTAM)