TiO2 thin film transistor by atomic layer deposition

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buir.contributor.authorOkyay, Ali Kemal
dc.citation.volumeNumber8626en_US
dc.contributor.authorOkyay, Ali Kemalen_US
dc.contributor.authorOruç, Feyza B.en_US
dc.contributor.authorÇimen, Furkanen_US
dc.contributor.authorAygün, Levent E.en_US
dc.coverage.spatialSan Francisco, California, United Statesen_US
dc.date.accessioned2016-02-08T12:08:17Z
dc.date.available2016-02-08T12:08:17Z
dc.date.issued2013en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.descriptionDate of Conference: 3–6 February 2013en_US
dc.descriptionConference name: Proceedings of SPIE, Oxide-based Materials and Devices IVen_US
dc.description.abstractIn this study, TiO2 films were deposited using thermal Atomic Layer Deposition (ALD) system. It is observed that asdeposited ALD TiO 2 films are amorphous and not suitable as TFT channel material. In order to use the film as channel material, a post-annealing process is needed. Annealed films transform into a polycrystalline form containing mixed anatase and rutile phases. For this purpose, devices are annealed at 475°C and observed that their threshold voltage value is 6.5V, subthreshold slope is 0.35 V/dec, Ion/Ioff ratios 2.5×106 and mobility value is 0.672 cm2/V.s. Optical response measurements showed that devices exhibits decent performance at ultraviolet region where TiO 2 has band to band absorption mechanism. © 2013 SPIE.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T12:08:17Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2013en
dc.identifier.doi10.1117/12.2005528en_US
dc.identifier.issn0277-786X
dc.identifier.urihttp://hdl.handle.net/11693/28011
dc.language.isoEnglishen_US
dc.publisherSPIEen_US
dc.relation.isversionofhttp://dx.doi.org/10.1117/12.2005528en_US
dc.source.titleProceedings of SPIEen_US
dc.subjectAtomic Layer Depositionen_US
dc.subjectThin Film Transistorsen_US
dc.subjectTitanium Dioxideen_US
dc.subjectTransparent Electronicsen_US
dc.subjectAbsorption mechanismsen_US
dc.subjectChannel materialsen_US
dc.subjectOptical responseen_US
dc.subjectPolycrystallineen_US
dc.subjectPost annealingen_US
dc.subjectSubthreshold slopeen_US
dc.subjectTransparent electronicsen_US
dc.subjectUltraviolet regionen_US
dc.subjectAmorphous filmsen_US
dc.subjectAmorphous materialsen_US
dc.subjectDepositionen_US
dc.subjectOxide mineralsen_US
dc.subjectThin film transistorsen_US
dc.subjectTitanium dioxideen_US
dc.subjectAtomic layer depositionen_US
dc.titleTiO2 thin film transistor by atomic layer depositionen_US
dc.typeConference Paperen_US

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