TiO2 thin film transistor by atomic layer deposition
Date
2013
Authors
Okyay, Ali Kemal
Oruç, Feyza B.
Çimen, Furkan
Aygün, Levent E.
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Abstract
In this study, TiO2 films were deposited using thermal Atomic Layer Deposition (ALD) system. It is observed that asdeposited ALD TiO 2 films are amorphous and not suitable as TFT channel material. In order to use the film as channel material, a post-annealing process is needed. Annealed films transform into a polycrystalline form containing mixed anatase and rutile phases. For this purpose, devices are annealed at 475°C and observed that their threshold voltage value is 6.5V, subthreshold slope is 0.35 V/dec, Ion/Ioff ratios 2.5×106 and mobility value is 0.672 cm2/V.s. Optical response measurements showed that devices exhibits decent performance at ultraviolet region where TiO 2 has band to band absorption mechanism. © 2013 SPIE.
Source Title
Proceedings of SPIE
Publisher
SPIE
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Keywords
Atomic Layer Deposition, Thin Film Transistors, Titanium Dioxide, Transparent Electronics, Absorption mechanisms, Channel materials, Optical response, Polycrystalline, Post annealing, Subthreshold slope, Transparent electronics, Ultraviolet region, Amorphous films, Amorphous materials, Deposition, Oxide minerals, Thin film transistors, Titanium dioxide, Atomic layer deposition
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Language
English
Type
Conference Paper