TiO2 thin film transistor by atomic layer deposition
Date
2013
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Source Title
Proceedings of SPIE
Print ISSN
0277-786X
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Publisher
SPIE
Volume
8626
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Language
English
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Abstract
In this study, TiO2 films were deposited using thermal Atomic Layer Deposition (ALD) system. It is observed that asdeposited ALD TiO 2 films are amorphous and not suitable as TFT channel material. In order to use the film as channel material, a post-annealing process is needed. Annealed films transform into a polycrystalline form containing mixed anatase and rutile phases. For this purpose, devices are annealed at 475°C and observed that their threshold voltage value is 6.5V, subthreshold slope is 0.35 V/dec, Ion/Ioff ratios 2.5×106 and mobility value is 0.672 cm2/V.s. Optical response measurements showed that devices exhibits decent performance at ultraviolet region where TiO 2 has band to band absorption mechanism. © 2013 SPIE.
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Keywords
Atomic Layer Deposition , Thin Film Transistors , Titanium Dioxide , Transparent Electronics , Absorption mechanisms , Channel materials , Optical response , Polycrystalline , Post annealing , Subthreshold slope , Transparent electronics , Ultraviolet region , Amorphous films , Amorphous materials , Deposition , Oxide minerals , Thin film transistors , Titanium dioxide , Atomic layer deposition