Controlled growth and characterization of epitaxially-laterally-overgrown InGaN/GaN quantum heterostructures

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buir.contributor.orcidDemir, Hilmi Volkan|0000-0003-1793-112X
dc.citation.epage290en_US
dc.citation.spage289en_US
dc.contributor.authorSarı, Emreen_US
dc.contributor.authorAkyuz, Özgünen_US
dc.contributor.authorChoi, E. -G.en_US
dc.contributor.authorLee I.-H.en_US
dc.contributor.authorBaek J.H.en_US
dc.contributor.authorDemir, Hilmi Volkanen_US
dc.coverage.spatialDenver, CO, USAen_US
dc.date.accessioned2016-02-08T12:22:22Z
dc.date.available2016-02-08T12:22:22Z
dc.date.issued2010en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.descriptionDate of Conference: 7-11 Nov. 2010en_US
dc.description.abstractCrystal material quality is fundamentally important for optoelectronic devices including laser diodes and light emitting diodes. To this end epitaxial lateral overgrowth (ELO) has proven to be a powerful technique for reducing dislocation density in GaN and its alloys [1,2]. Implementation and design of ELO process is, however, critical for obtaining high-quality material with high-efficiency quantum structures for light emitters [3]. ©2010 IEEE.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T12:22:22Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2010en
dc.identifier.doi10.1109/PHOTONICS.2010.5698873en_US
dc.identifier.urihttp://hdl.handle.net/11693/28501
dc.language.isoEnglishen_US
dc.publisherIEEEen_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/PHOTONICS.2010.5698873en_US
dc.source.title2010 23rd Annual Meeting of the IEEE Photonics Societyen_US
dc.subjectControlled growthen_US
dc.subjectCrystal materialen_US
dc.subjectDislocation densitiesen_US
dc.subjectEpitaxial lateral overgrowthen_US
dc.subjectHigh efficiencyen_US
dc.subjectHigh-quality materialsen_US
dc.subjectInGaN/GaNen_US
dc.subjectLaser diodesen_US
dc.subjectLight emittersen_US
dc.subjectQuantum heterostructuresen_US
dc.subjectQuantum structureen_US
dc.subjectDislocations (crystals)en_US
dc.subjectGallium alloysen_US
dc.subjectGallium nitrideen_US
dc.subjectLight emissionen_US
dc.subjectLight emitting diodesen_US
dc.subjectOptoelectronic devicesen_US
dc.subjectEpitaxial growthen_US
dc.titleControlled growth and characterization of epitaxially-laterally-overgrown InGaN/GaN quantum heterostructuresen_US
dc.typeConference Paperen_US

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