Area-selective atomic layer deposition using an inductively coupled plasma polymerized fluorocarbon layer: A case study for metal oxides

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buir.contributor.authorBıyıklı, Necmi
dc.citation.epage26401en_US
dc.citation.issueNumber46en_US
dc.citation.spage26393en_US
dc.citation.volumeNumber120en_US
dc.contributor.authorHaider, A.en_US
dc.contributor.authorDeminskyi, P.en_US
dc.contributor.authorKhan, T. M.en_US
dc.contributor.authorEren, H.en_US
dc.contributor.authorBıyıklı, Necmien_US
dc.date.accessioned2018-04-12T10:51:31Z
dc.date.available2018-04-12T10:51:31Z
dc.date.issued2016en_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.description.abstractArea-selective atomic layer deposition (AS-ALD) has attracted immense attention in recent years for self-aligned accurate pattern placement with subnanometer thickness control. Here, we demonstrate a methodology to achieve AS-ALD by using inductively couple plasma (ICP) grown fluorocarbon polymer film as hydrophobic blocking layer for selective deposition. Our approach has been tested for metal-oxide materials including ZnO, Al2O3, and HfO2. Contact angle, X-ray photoelectron spectroscopy (XPS), spectroscopic ellipsometer, and scanning electron microscopy (SEM) measurements were performed to investigate the blocking ability of plasma polymerized fluorocarbon layers against ALD-grown metal-oxide films. A considerable growth inhibition for ZnO has been observed on fluorocarbon coated Si(100) surfaces, while the same polymerized surface caused a relatively slow nucleation for HfO2 films. No growth selectivity was obtained for Al2O3 films, displaying almost the same nucleation behavior on Si and fluorocarbon surfaces. Thin film patterning has been demonstrated using this strategy by growing ZnO on lithographically patterned fluorocarbon/Si samples. High resolution SEM images and XPS line scan confirmed the successful patterning of ZnO up to a film thickness of ∼15 nm. © 2016 American Chemical Society.en_US
dc.identifier.doi10.1021/acs.jpcc.6b09406en_US
dc.identifier.eissn1932-7455en_US
dc.identifier.issn19327447
dc.identifier.urihttp://hdl.handle.net/11693/36737
dc.language.isoEnglishen_US
dc.publisherAmerican Chemical Societyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1021/acs.jpcc.6b09406en_US
dc.source.titleJournal of Physical Chemistry Cen_US
dc.subjectAluminaen_US
dc.subjectAluminum compoundsen_US
dc.subjectDepositionen_US
dc.subjectHafnium oxidesen_US
dc.subjectII-VI semiconductorsen_US
dc.subjectInductively coupled plasmaen_US
dc.subjectMetallic compoundsen_US
dc.subjectMetalsen_US
dc.subjectNucleationen_US
dc.subjectOxide filmsen_US
dc.subjectPolymer filmsen_US
dc.subjectPolymersen_US
dc.subjectScanning electron microscopyen_US
dc.subjectSemiconducting filmsen_US
dc.subjectSilicon compoundsen_US
dc.subjectThin filmsen_US
dc.subjectX ray photoelectron spectroscopyen_US
dc.subjectZinc oxideen_US
dc.subjectFluorocarbon polymer filmen_US
dc.subjectGrowth inhibitionen_US
dc.subjectMetal oxide materialsen_US
dc.subjectNucleation behavioren_US
dc.subjectPattern placementsen_US
dc.subjectPlasma-polymerized fluorocarbonsen_US
dc.subjectSelective depositionen_US
dc.subjectSpectroscopic ellipsometersen_US
dc.subjectAtomic layer depositionen_US
dc.titleArea-selective atomic layer deposition using an inductively coupled plasma polymerized fluorocarbon layer: A case study for metal oxidesen_US
dc.typeArticleen_US

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Institute of Materials Science and Nanotechnology (UNAM)