High efficiency monolithic photodetectors for integrated optoelectronics in the near infrared

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buir.contributor.authorOkyay, Ali Kemal
dc.citation.epage304en_US
dc.citation.spage303en_US
dc.contributor.authorOkyay, Ali Kemalen_US
dc.contributor.authorOnbaşlı, M. Cengizen_US
dc.contributor.authorErcan, Burcuen_US
dc.contributor.authorYu H.-Y.en_US
dc.contributor.authorRen, S.en_US
dc.contributor.authorMiller, D.A.B.en_US
dc.contributor.authorSaraswat, K.C.en_US
dc.contributor.authorNayfeh, A.M.en_US
dc.coverage.spatialBelek-Antalya, Turkeyen_US
dc.date.accessioned2016-02-08T12:24:51Z
dc.date.available2016-02-08T12:24:51Z
dc.date.issued2009en_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.descriptionDate of Conference: 4-8 Oct. 2009en_US
dc.description.abstractMonolithic Germanium photodetectors integrated on Si with external efficiency up to 68% at 1550nm and low dark current density 3.2mA/cm2 are demonstrated. The absorption edge red shifted by 47nm corresponding to bandgap energy reduced by 24meV. © 2009 IEEE.en_US
dc.identifier.doi10.1109/LEOS.2009.5343246en_US
dc.identifier.issn1092-8081
dc.identifier.urihttp://hdl.handle.net/11693/28601
dc.language.isoEnglishen_US
dc.publisherIEEEen_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/LEOS.2009.5343246en_US
dc.source.title2009 IEEE LEOS Annual Meeting Conference Proceedingsen_US
dc.subject1550 nmen_US
dc.subjectAbsorption edgesen_US
dc.subjectBand gap energyen_US
dc.subjectExternal efficiencyen_US
dc.subjectHigh efficiencyen_US
dc.subjectNear Infrareden_US
dc.subjectRed-shifteden_US
dc.subjectGermaniumen_US
dc.subjectOptoelectronic devicesen_US
dc.subjectPhotodetectorsen_US
dc.subjectIntegrated optoelectronicsen_US
dc.titleHigh efficiency monolithic photodetectors for integrated optoelectronics in the near infrareden_US
dc.typeConference Paperen_US

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Institute of Materials Science and Nanotechnology (UNAM)
Department of Electrical and Electronics Engineering