High efficiency monolithic photodetectors for integrated optoelectronics in the near infrared

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High efficiency monolithic photodetectors for integrated optoelectronics in the near infrared.pdf (456.98 KB)

Date

2009

Authors

Okyay, Ali Kemal

Onbaşlı, M. Cengiz

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Abstract

Monolithic Germanium photodetectors integrated on Si with external efficiency up to 68% at 1550nm and low dark current density 3.2mA/cm2 are demonstrated. The absorption edge red shifted by 47nm corresponding to bandgap energy reduced by 24meV. © 2009 IEEE.

Source Title

2009 IEEE LEOS Annual Meeting Conference Proceedings

Publisher

IEEE

Keywords

1550 nm, Absorption edges, Band gap energy, External efficiency, High efficiency, Near Infrared, Red-shifted, Germanium, Optoelectronic devices, Photodetectors, Integrated optoelectronics

Permalink

http://hdl.handle.net/11693/28601

Published Version (Please cite this version)

http://dx.doi.org/10.1109/LEOS.2009.5343246

Collections

Scholarly Publications - UNAM
Scholarly Publications - Electrical and Electronics Engineering

Language

English

Type

Conference Paper