High efficiency monolithic photodetectors for integrated optoelectronics in the near infrared

Date
2009
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Source Title
2009 IEEE LEOS Annual Meeting Conference Proceedings
Print ISSN
1092-8081
Electronic ISSN
Publisher
IEEE
Volume
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Pages
303 - 304
Language
English
Type
Conference Paper
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Abstract

Monolithic Germanium photodetectors integrated on Si with external efficiency up to 68% at 1550nm and low dark current density 3.2mA/cm2 are demonstrated. The absorption edge red shifted by 47nm corresponding to bandgap energy reduced by 24meV. © 2009 IEEE.

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Book Title
Keywords
1550 nm, Absorption edges, Band gap energy, External efficiency, High efficiency, Near Infrared, Red-shifted, Germanium, Optoelectronic devices, Photodetectors, Integrated optoelectronics
Citation
Published Version (Please cite this version)