High efficiency monolithic photodetectors for integrated optoelectronics in the near infrared
Date
2009
Editor(s)
Advisor
Supervisor
Co-Advisor
Co-Supervisor
Instructor
Source Title
2009 IEEE LEOS Annual Meeting Conference Proceedings
Print ISSN
1092-8081
Electronic ISSN
Publisher
IEEE
Volume
Issue
Pages
303 - 304
Language
English
Type
Journal Title
Journal ISSN
Volume Title
Series
Abstract
Monolithic Germanium photodetectors integrated on Si with external efficiency up to 68% at 1550nm and low dark current density 3.2mA/cm2 are demonstrated. The absorption edge red shifted by 47nm corresponding to bandgap energy reduced by 24meV. © 2009 IEEE.