Electron transport properties in Al0.25Ga0.75N/AlN/GaN heterostructures with different InGaN back barrier layers and GaN channel thicknesses grown by MOCVD

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage438en_US
dc.citation.issueNumber3en_US
dc.citation.spage434en_US
dc.citation.volumeNumber209en_US
dc.contributor.authorKelekci, O.en_US
dc.contributor.authorTasli, P. T.en_US
dc.contributor.authorYu, H.en_US
dc.contributor.authorKasap, M.en_US
dc.contributor.authorOzcelik, S.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2015-07-28T12:04:49Z
dc.date.available2015-07-28T12:04:49Z
dc.date.issued2012-01-24en_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstractThe electron transport properties in Al0.25Ga0.75N/AlN/GaN/InxGa1-xN/GaN double heterostructures with various indium compositions and GaN channel thicknesses were investigated. Samples were grown on c-plane sapphire substrates by MOCVD and evaluated using variable temperature Hall effect measurements. In order to understand the observed transport properties, various scattering mechanisms, such as acoustic phonon, optical phonon, interface roughness, background impurity, and alloy disorder, were included in the theoretical model that was applied to the temperature-dependent mobility data. It was found that low temperature (T < 160 K) mobility is limited only by the interface roughness scattering mechanism, while at high temperatures (T > 160 K), optical phonon scattering is the dominant scattering mechanism for AlGaN/AlN/GaN/InGaN/GaN heterostructures. The higher mobility of the structures with InGaN back barriers was attributed to the large conduction band discontinuity obtained at the channel/buffer interface, which leads to better electron confinement.en_US
dc.identifier.doi10.1002/pssa.201100313en_US
dc.identifier.issn1862-6300
dc.identifier.urihttp://hdl.handle.net/11693/13162
dc.language.isoEnglishen_US
dc.publisherWileyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1002/pssa.201100313en_US
dc.source.titlePhysica Status Solidi (A) Applications and Materials Scienceen_US
dc.subjectBack barrieren_US
dc.subjectElectron transporten_US
dc.subjectGaN HEMTen_US
dc.subjectScatteringen_US
dc.titleElectron transport properties in Al0.25Ga0.75N/AlN/GaN heterostructures with different InGaN back barrier layers and GaN channel thicknesses grown by MOCVDen_US
dc.typeArticleen_US

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