Statistics for Electron transport properties in Al0.25Ga0.75N/AlN/GaN heterostructures with different InGaN back barrier layers and GaN channel thicknesses grown by MOCVD
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| Electron transport properties in Al0.25Ga0.75N/AlN/GaN heterostructures with different InGaN back barrier layers and GaN channel thicknesses grown by MOCVD | 0 |
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| 10.1002-pssa.201100313.pdf | 11 |