Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures

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buir.contributor.authorUyar, Tamer
buir.contributor.authorBıyıklı, Necmi
buir.contributor.authorOkyay, Ali Kemal
buir.contributor.orcidUyar, Tamer|0000-0002-3989-4481
buir.contributor.orcidOkyay, Ali Kemal|0000-0002-4956-5307
dc.citation.epage398en_US
dc.citation.issueNumber4-5en_US
dc.citation.spage394en_US
dc.citation.volumeNumber12en_US
dc.contributor.authorOzgit Akgun, C.en_US
dc.contributor.authorGoldenberg, E.en_US
dc.contributor.authorBolat, S.en_US
dc.contributor.authorTekcan, B.en_US
dc.contributor.authorKayaci, F.en_US
dc.contributor.authorUyar, Tameren_US
dc.contributor.authorOkyay, Ali Kemalen_US
dc.contributor.authorBıyıklı, Necmien_US
dc.date.accessioned2016-02-08T10:15:49Z
dc.date.available2016-02-08T10:15:49Z
dc.date.issued2015en_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.description.abstractHollow cathode plasma-assisted atomic layer deposition (HCPA-ALD) is a promising technique for obtaining III-nitride thin films with low impurity concentrations at low temperatures. Here we report our previous and current efforts on the development of HCPA-ALD processes for III-nitrides together with the properties of resulting thin films and nanostructures. The content further includes nylon 6,6-GaN core-shell nanofibers, proof-of-concept thin film transistors and UV photodetectors fabricated using HCPA-ALD-grown GaN layers, as well as InN thin films deposited by HCPA-ALD using cyclopentadienyl indium and trimethylindium precursors. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.en_US
dc.identifier.doi10.1002/pssc.201400167en_US
dc.identifier.issn1862-6351
dc.identifier.urihttp://hdl.handle.net/11693/23569
dc.language.isoEnglishen_US
dc.publisherWiley - V C H Verlag GmbH & Co. KGaAen_US
dc.relation.isversionofhttp://dx.doi.org/10.1002/pssc.201400167en_US
dc.source.titlePhysica Status Solidi. C: Current Topics in Solid State Physicsen_US
dc.subjectAlNen_US
dc.subjectGaNen_US
dc.subjectInNen_US
dc.subjectAtomic layer deposition (ALD)en_US
dc.subjectHollow cathode plasmaen_US
dc.subjectAluminum nitrideen_US
dc.subjectAtomsen_US
dc.subjectCathodesen_US
dc.subjectDepositionen_US
dc.subjectElectrodesen_US
dc.subjectElectron sourcesen_US
dc.subjectGallium nitrideen_US
dc.subjectIndiumen_US
dc.subjectNanostructuresen_US
dc.subjectNitridesen_US
dc.subjectPulsed laser depositionen_US
dc.subjectTemperatureen_US
dc.subjectThin film transistorsen_US
dc.subjectCore-shell nanofibersen_US
dc.subjectCyclopentadienylsen_US
dc.subjectHollow cathodesen_US
dc.subjectLow impurity concentrationsen_US
dc.subjectUV photodetectorsen_US
dc.titleLow-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructuresen_US
dc.typeArticleen_US

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Institute of Materials Science and Nanotechnology (UNAM)
Department of Electrical and Electronics Engineering
Nanotechnology Research Center (NANOTAM)