Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
buir.contributor.author | Uyar, Tamer | |
buir.contributor.author | Bıyıklı, Necmi | |
buir.contributor.author | Okyay, Ali Kemal | |
buir.contributor.orcid | Uyar, Tamer|0000-0002-3989-4481 | |
buir.contributor.orcid | Okyay, Ali Kemal|0000-0002-4956-5307 | |
dc.citation.epage | 398 | en_US |
dc.citation.issueNumber | 4-5 | en_US |
dc.citation.spage | 394 | en_US |
dc.citation.volumeNumber | 12 | en_US |
dc.contributor.author | Ozgit Akgun, C. | en_US |
dc.contributor.author | Goldenberg, E. | en_US |
dc.contributor.author | Bolat, S. | en_US |
dc.contributor.author | Tekcan, B. | en_US |
dc.contributor.author | Kayaci, F. | en_US |
dc.contributor.author | Uyar, Tamer | en_US |
dc.contributor.author | Okyay, Ali Kemal | en_US |
dc.contributor.author | Bıyıklı, Necmi | en_US |
dc.date.accessioned | 2016-02-08T10:15:49Z | |
dc.date.available | 2016-02-08T10:15:49Z | |
dc.date.issued | 2015 | en_US |
dc.department | Nanotechnology Research Center (NANOTAM) | en_US |
dc.department | Department of Electrical and Electronics Engineering | en_US |
dc.department | Institute of Materials Science and Nanotechnology (UNAM) | en_US |
dc.description.abstract | Hollow cathode plasma-assisted atomic layer deposition (HCPA-ALD) is a promising technique for obtaining III-nitride thin films with low impurity concentrations at low temperatures. Here we report our previous and current efforts on the development of HCPA-ALD processes for III-nitrides together with the properties of resulting thin films and nanostructures. The content further includes nylon 6,6-GaN core-shell nanofibers, proof-of-concept thin film transistors and UV photodetectors fabricated using HCPA-ALD-grown GaN layers, as well as InN thin films deposited by HCPA-ALD using cyclopentadienyl indium and trimethylindium precursors. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. | en_US |
dc.description.provenance | Made available in DSpace on 2016-02-08T10:15:49Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2015 | en |
dc.identifier.doi | 10.1002/pssc.201400167 | en_US |
dc.identifier.issn | 1862-6351 | |
dc.identifier.uri | http://hdl.handle.net/11693/23569 | |
dc.language.iso | English | en_US |
dc.publisher | Wiley - V C H Verlag GmbH & Co. KGaA | en_US |
dc.relation.isversionof | http://dx.doi.org/10.1002/pssc.201400167 | en_US |
dc.source.title | Physica Status Solidi. C: Current Topics in Solid State Physics | en_US |
dc.subject | AlN | en_US |
dc.subject | GaN | en_US |
dc.subject | InN | en_US |
dc.subject | Atomic layer deposition (ALD) | en_US |
dc.subject | Hollow cathode plasma | en_US |
dc.subject | Aluminum nitride | en_US |
dc.subject | Atoms | en_US |
dc.subject | Cathodes | en_US |
dc.subject | Deposition | en_US |
dc.subject | Electrodes | en_US |
dc.subject | Electron sources | en_US |
dc.subject | Gallium nitride | en_US |
dc.subject | Indium | en_US |
dc.subject | Nanostructures | en_US |
dc.subject | Nitrides | en_US |
dc.subject | Pulsed laser deposition | en_US |
dc.subject | Temperature | en_US |
dc.subject | Thin film transistors | en_US |
dc.subject | Core-shell nanofibers | en_US |
dc.subject | Cyclopentadienyls | en_US |
dc.subject | Hollow cathodes | en_US |
dc.subject | Low impurity concentrations | en_US |
dc.subject | UV photodetectors | en_US |
dc.title | Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures | en_US |
dc.type | Article | en_US |
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