Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
Date
2015
Editor(s)
Advisor
Supervisor
Co-Advisor
Co-Supervisor
Instructor
Source Title
Physica Status Solidi. C: Current Topics in Solid State Physics
Print ISSN
1862-6351
Electronic ISSN
Publisher
Wiley - V C H Verlag GmbH & Co. KGaA
Volume
12
Issue
4-5
Pages
394 - 398
Language
English
Type
Journal Title
Journal ISSN
Volume Title
Series
Abstract
Hollow cathode plasma-assisted atomic layer deposition (HCPA-ALD) is a promising technique for obtaining III-nitride thin films with low impurity concentrations at low temperatures. Here we report our previous and current efforts on the development of HCPA-ALD processes for III-nitrides together with the properties of resulting thin films and nanostructures. The content further includes nylon 6,6-GaN core-shell nanofibers, proof-of-concept thin film transistors and UV photodetectors fabricated using HCPA-ALD-grown GaN layers, as well as InN thin films deposited by HCPA-ALD using cyclopentadienyl indium and trimethylindium precursors. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Course
Other identifiers
Book Title
Keywords
AlN , GaN , InN , Atomic layer deposition (ALD) , Hollow cathode plasma , Aluminum nitride , Atoms , Cathodes , Deposition , Electrodes , Electron sources , Gallium nitride , Indium , Nanostructures , Nitrides , Pulsed laser deposition , Temperature , Thin film transistors , Core-shell nanofibers , Cyclopentadienyls , Hollow cathodes , Low impurity concentrations , UV photodetectors