Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures

Date
2015
Advisor
Instructor
Source Title
Physica Status Solidi. C: Current Topics in Solid State Physics
Print ISSN
1862-6351
Electronic ISSN
Publisher
Wiley - V C H Verlag GmbH & Co. KGaA
Volume
12
Issue
4-5
Pages
394 - 398
Language
English
Type
Article
Journal Title
Journal ISSN
Volume Title
Abstract

Hollow cathode plasma-assisted atomic layer deposition (HCPA-ALD) is a promising technique for obtaining III-nitride thin films with low impurity concentrations at low temperatures. Here we report our previous and current efforts on the development of HCPA-ALD processes for III-nitrides together with the properties of resulting thin films and nanostructures. The content further includes nylon 6,6-GaN core-shell nanofibers, proof-of-concept thin film transistors and UV photodetectors fabricated using HCPA-ALD-grown GaN layers, as well as InN thin films deposited by HCPA-ALD using cyclopentadienyl indium and trimethylindium precursors. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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Other identifiers
Book Title
Keywords
AlN, GaN, InN, Atomic layer deposition (ALD), Hollow cathode plasma, Aluminum nitride, Atoms, Cathodes, Deposition, Electrodes, Electron sources, Gallium nitride, Indium, Nanostructures, Nitrides, Pulsed laser deposition, Temperature, Thin film transistors, Core-shell nanofibers, Cyclopentadienyls, Hollow cathodes, Low impurity concentrations, UV photodetectors
Citation
Published Version (Please cite this version)