Capacitance-conductance-current-voltage characteristics of atomic layer deposited Au/Ti/Al2O3/n-GaAs MIS structures

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buir.contributor.authorBıyıklı, Necmi
dc.citation.epage407en_US
dc.citation.spage400en_US
dc.citation.volumeNumber39en_US
dc.contributor.authorTurut, A.en_US
dc.contributor.authorKarabulut, A.en_US
dc.contributor.authorEjderha, K.en_US
dc.contributor.authorBıyıklı, Necmien_US
dc.date.accessioned2016-02-08T09:50:30Z
dc.date.available2016-02-08T09:50:30Z
dc.date.issued2015en_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstractWe have studied the admittance and current–voltage characteristics of the Au/Ti/Al2O3/nGaAs structure. The Al2O3 layer of about 5 nm was formed on the n-GaAs by atomic layer deposition. The barrier height (BH) and ideality factor values of 1.18 eV and 2.45 were obtained from the forward-bias ln I vs V plot at 300 K. The BH value of 1.18 eV is larger than the values reported for conventional Ti/n-GaAs or Au/Ti/n-GaAs diodes. The barrier modification is very important in metal semiconductor devices. The use of an increased barrier diode as the gate can provide an adequate barrier height for FET operation while the decreased barrier diodes also show promise as small signal zero-bias rectifiers and microwave. The experimental capacitance and conductance characteristics were corrected by taking into account the device series resistance Rs. It has been seen that the noncorrection characteristics cause a serious error in the extraction of the interfacial properties. Furthermore, the device behaved more capacitive at the reverse bias voltage range rather than the forward bias voltage range because the phase angle in the reverse bias has remained unchanged as 901 independent of the measurement frequency.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T09:50:30Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2015en_US
dc.identifier.doi10.1016/j.mssp.2015.05.025en_US
dc.identifier.issn1369-8001
dc.identifier.urihttp://hdl.handle.net/11693/21736
dc.language.isoEnglishen_US
dc.publisherElsevier Ltden_US
dc.relation.isversionofhttp://dx.doi.org/10.1016/j.mssp.2015.05.025en_US
dc.source.titleMaterials Science in Semiconductor Processingen_US
dc.subjectAtomic layer depositionen_US
dc.subjectBias voltageen_US
dc.subjectCapacitanceen_US
dc.subjectDiodesen_US
dc.subjectElectric resistanceen_US
dc.subjectGolden_US
dc.subjectGold depositsen_US
dc.subjectRectifying circuitsen_US
dc.subjectSemiconductor devicesen_US
dc.subjectSemiconductor diodesen_US
dc.subjectAtomic layer depositeden_US
dc.subjectConductance currenten_US
dc.subjectForward bias voltageen_US
dc.subjectInterfacial propertyen_US
dc.subjectMeasurement frequencyen_US
dc.subjectMetal semiconductorsen_US
dc.subjectReverse bias voltageen_US
dc.subjectSeries resistancesen_US
dc.subjectCurrent voltage characteristicsen_US
dc.titleCapacitance-conductance-current-voltage characteristics of atomic layer deposited Au/Ti/Al2O3/n-GaAs MIS structuresen_US
dc.typeArticleen_US

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