Electro-optic modulation of InAs quantum dot waveguides

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buir.contributor.authorAydınlı, Atilla
dc.citation.epage188en_US
dc.citation.spage185en_US
dc.contributor.authorAkça, İmran. B.en_US
dc.contributor.authorDâna, Aykutluen_US
dc.contributor.authorAydınlı, Atillaen_US
dc.contributor.authorRossetti, M.en_US
dc.contributor.authorLi, L.en_US
dc.contributor.authorFiore, A.en_US
dc.contributor.authorDağlı, N.en_US
dc.coverage.spatialEindhoven, Netherlandsen_US
dc.date.accessioned2016-02-08T11:36:47Zen_US
dc.date.available2016-02-08T11:36:47Zen_US
dc.date.issued2008en_US
dc.departmentDepartment of Physicsen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.descriptionDate of Conference: 11-13 June 2008en_US
dc.descriptionConference Name: 14th European Conference on Integrated Optics, ECIO 2008en_US
dc.description.abstractThe linear electro-optic properties in waveguides containing self-organized In As quantum dots were studied experimentally. Fabry-Perot measurements at 1515 nm on InAs/GaAs quantum dot structures yield a significantly enhanced linear electro-optic efficiency compared to bulk GaAs.en_US
dc.identifier.urihttp://hdl.handle.net/11693/26818
dc.language.isoEnglishen_US
dc.publisherTechnische Universiteit Eindhovenen_US
dc.source.titleProceedings of the 14th European Conference on Integrated Optics, ECIO 2008en_US
dc.subjectIndium arsenideen_US
dc.subjectIntegrated circuitsen_US
dc.subjectIntegrated opticsen_US
dc.subjectModulationen_US
dc.subjectOptical materialsen_US
dc.subjectOptical waveguidesen_US
dc.subjectPhotonicsen_US
dc.subjectQuantum electronicsen_US
dc.subjectWaveguidesen_US
dc.subjectInAs/GaAsen_US
dc.subjectOptic modulationsen_US
dc.subjectOptic propertiesen_US
dc.subjectQuantum dotsen_US
dc.subjectSemiconductor quantum dotsen_US
dc.titleElectro-optic modulation of InAs quantum dot waveguidesen_US
dc.typeConference Paperen_US

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