Low-threshold optical gain and lasing of colloidal nanoplatelets

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buir.contributor.orcidDemir, Hilmi Volkan|0000-0003-1793-112X
dc.citation.epage541en_US
dc.citation.spage540en_US
dc.contributor.authorKeleştemur, Yusufen_US
dc.contributor.authorGüzeltürk, Buraken_US
dc.contributor.authorOlutaş, Muraten_US
dc.contributor.authorDelikanlı, Savaşen_US
dc.contributor.authorDemir, Hilmi Volkanen_US
dc.coverage.spatialSan Diego, CA, USA
dc.date.accessioned2016-02-08T12:03:27Z
dc.date.available2016-02-08T12:03:27Z
dc.date.issued2014-10en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentDepartment of Physicsen_US
dc.descriptionDate of Conference: 12-16 Oct. 2014
dc.descriptionConference name: 2014 IEEE Photonics Conference
dc.description.abstractSemiconductor nanocrystals, which are also known as colloidal quantum dots (CQDs), are highly attractive materials for high performance optoelectronic device applications such as lasers. With their size, shape and composition tunable electronic structure and optical properties, CQDs are highly desired for achieving full-color, temperature-insensitive, low-threshold and solution-processed lasers [1, 2]. However, due to their small size, they suffer from the nonradiative multiexciton Auger Recombination (AR), where energy of a bound electron-hole pair is transferred to a third particle of either an electron or a hole instead of radiative recombination. Therefore, CQDs having suppressed AR are strongly required for achieving high quality CQD-based lasers. To address this issue, CQDs having different size, shape and electronic structure have been synthesized and studied extensively [3-5]. Generally, suppression of AR and lower optical gain thresholds are achieved via reducing the wavefunction overlap of the electron and hole in a CQD. However, the separation of the electron and hole wavefunctions will dramatically decrease the oscillator strength and optical gain coefficient, which is highly critical for achieving high performance lasers. Therefore, colloidal materials with suppressed AR and high gain coefficients are highly welcomed. Here, we study optical gain performance of colloidal quantum wells [6] of CdSe-core and CdSe/CdS core/crown nanoplatelets (NPLs) that demonstrate remarkable optical properties with ultra-low threshold one- and two-photon optical pumping. As a result of their giant oscillator strength, superior optical gain and lasing performance are achieved from these colloidal NPLs with greatly enhanced gain coefficient [7]. © 2014 IEEE.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T12:03:27Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2014en
dc.identifier.doi10.1109/IPCon.2014.6995489en_US
dc.identifier.urihttp://hdl.handle.net/11693/27869
dc.language.isoEnglishen_US
dc.publisherIEEEen_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/IPCon.2014.6995489en_US
dc.source.titleIEEE Photonics Conference, IPC 2014en_US
dc.subjectElectronic structureen_US
dc.subjectElectronsen_US
dc.subjectNanocrystalsen_US
dc.subjectOptical propertiesen_US
dc.subjectOptical pumpingen_US
dc.subjectOptoelectronic devicesen_US
dc.subjectPhotonicsen_US
dc.subjectQuantum dot lasersen_US
dc.subjectQuantum well lasersen_US
dc.subjectSemiconductor lasersen_US
dc.subjectSemiconductor quantum dotsen_US
dc.subjectSemiconductor quantum wellsen_US
dc.subjectColloidal quantum wellsen_US
dc.subjectElectronic structure and optical propertiesen_US
dc.subjectGiant oscillator strengthen_US
dc.subjectHigh gain coefficientsen_US
dc.subjectHigh performance lasersen_US
dc.subjectRadiative recombinationen_US
dc.subjectSemiconductor nanocrystalsen_US
dc.subjectTemperature-insensitiveen_US
dc.subjectOptical gainen_US
dc.titleLow-threshold optical gain and lasing of colloidal nanoplateletsen_US
dc.typeConference Paperen_US

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Department of Electrical and Electronics Engineering
Department of Physics
Institute of Materials Science and Nanotechnology (UNAM)