High-speed solar-blind AlGaN-based metal-semiconductor-metal photodetectors

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buir.contributor.authorÖzbay, Ekmel
buir.contributor.authorBıyıklı, Necmi
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage2317en_US
dc.citation.spage2314en_US
dc.contributor.authorBıyıklı, Necmien_US
dc.contributor.authorKimukin, İbrahimen_US
dc.contributor.authorKartaloğlu, Tolgaen_US
dc.contributor.authorAytür, Orhanen_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2016-02-08T11:54:47Z
dc.date.available2016-02-08T11:54:47Z
dc.date.issued2003en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentDepartment of Physicsen_US
dc.descriptionConference name: Proceedings of the 5th International Conference on Nitride Semiconductors (ICNS‐5)
dc.description.abstractSolar-blind AlGaN metal-semiconductor-metal (MSM) photodetectors with fast pulse response have been demonstrated. The devices were fabricated on MOCVD-grown epitaxial Al0.38Ga0.62N layers, using a microwave compatible fabrication process. The photodiode samples exhibited low leakage with dark current densities below 1 × 10-6 A/cm 2 at 40 V reverse bias. Photoconductive gain-assisted photoresponse was observed with a peak responsivity of 1.26 A/W at 264 nm. A visible rejection of ∼3 orders of magnitude at 350 nm was demonstrated. Temporal high-speed measurements at 267 nm resulted in fast pulse responses with 3-dB bandwidths as high as 5.4 GHz. This corresponds to a record high-speed performance for solar-blind detectors. © 2003 WILEY-VCH Verlag GmbH & Co. KGaA.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T11:54:47Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2003en
dc.identifier.doi10.1002/pssc.200303518en_US
dc.identifier.issn1610-1634
dc.identifier.urihttp://hdl.handle.net/11693/27489
dc.language.isoEnglishen_US
dc.publisherWileyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1002/pssc.200303518en_US
dc.source.titlePhysica Status Solidi (C) Special Issue: 5th International Conference on Nitride Semiconductors (ICNS‐5)en_US
dc.subjectFabrication processen_US
dc.subjectHigh speed measurementsen_US
dc.subjectHigh-speed performanceen_US
dc.subjectMetal semiconductor metal photodetectoren_US
dc.subjectOrders of magnitudeen_US
dc.subjectPeak responsivityen_US
dc.subjectPhotoresponsesen_US
dc.subjectSolar-blind detectorsen_US
dc.subjectBandwidthen_US
dc.subjectNitridesen_US
dc.subjectPhotonsen_US
dc.subjectPhotodetectorsen_US
dc.titleHigh-speed solar-blind AlGaN-based metal-semiconductor-metal photodetectorsen_US
dc.typeConference Paperen_US

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