High-speed solar-blind AlGaN-based metal-semiconductor-metal photodetectors

Date
2003
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Source Title
Physica Status Solidi (C) Special Issue: 5th International Conference on Nitride Semiconductors (ICNS‐5)
Print ISSN
1610-1634
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Publisher
Wiley
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Pages
2314 - 2317
Language
English
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Abstract

Solar-blind AlGaN metal-semiconductor-metal (MSM) photodetectors with fast pulse response have been demonstrated. The devices were fabricated on MOCVD-grown epitaxial Al0.38Ga0.62N layers, using a microwave compatible fabrication process. The photodiode samples exhibited low leakage with dark current densities below 1 × 10-6 A/cm 2 at 40 V reverse bias. Photoconductive gain-assisted photoresponse was observed with a peak responsivity of 1.26 A/W at 264 nm. A visible rejection of ∼3 orders of magnitude at 350 nm was demonstrated. Temporal high-speed measurements at 267 nm resulted in fast pulse responses with 3-dB bandwidths as high as 5.4 GHz. This corresponds to a record high-speed performance for solar-blind detectors. © 2003 WILEY-VCH Verlag GmbH & Co. KGaA.

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