Comparison of trimethylgallium and triethylgallium as "ga" source materials for the growth of ultrathin GaN films on Si (100) substrates via hollow-cathode plasma-assisted atomic layer deposition

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buir.contributor.authorBıyıklı, Necmi
dc.citation.epage01A137-6en_US
dc.citation.issueNumber1en_US
dc.citation.spage01A137-1en_US
dc.citation.volumeNumber34en_US
dc.contributor.authorAlevli, M.en_US
dc.contributor.authorHaider A.en_US
dc.contributor.authorKizir S.en_US
dc.contributor.authorLeghari, S. A.en_US
dc.contributor.authorBıyıklı, Necmien_US
dc.date.accessioned2016-02-08T10:14:31Z
dc.date.available2016-02-08T10:14:31Z
dc.date.issued2016-02en_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstractGaN films grown by hollow cathode plasma-assisted atomic layer deposition using trimethylgallium (TMG) and triethylgallium (TEG) as gallium precursors are compared. Optimized and saturated TMG/TEG pulse widths were used in order to study the effect of group-III precursors. The films were characterized by grazing incidence x-ray diffraction, atomic force microscopy, x-ray photoelectron spectroscopy, and spectroscopic ellipsometry. Refractive index follows the same trend of crystalline quality, mean grain, and crystallite sizes. GaN layers grown using TMG precursor exhibited improved structural and optical properties when compared to GaN films grown with TEG precursor.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T10:14:31Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2016en
dc.identifier.doi10.1116/1.4937725en_US
dc.identifier.issn0734-2101
dc.identifier.urihttp://hdl.handle.net/11693/23480
dc.language.isoEnglishen_US
dc.publisherAVS Science and Technology Societyen_US
dc.relation.isversionofhttps://doi.org/10.1116/1.4937725en_US
dc.source.titleJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Filmsen_US
dc.subjectAtomic force microscopyen_US
dc.subjectAtomic layer depositionen_US
dc.subjectCathodesen_US
dc.subjectDepositionen_US
dc.subjectElectrodesen_US
dc.subjectElectron sourcesen_US
dc.subjectFilmsen_US
dc.subjectGallium nitrideen_US
dc.subjectOptical propertiesen_US
dc.subjectPulsed laser depositionen_US
dc.subjectRefractive indexen_US
dc.subjectSpectroscopic ellipsometryen_US
dc.subjectUltrathin filmsen_US
dc.subjectX ray diffractionen_US
dc.subjectCrystalline qualityen_US
dc.subjectGrazing incidence X-ray diffractionen_US
dc.subjectHollow cathodesen_US
dc.subjectSi (100) substrateen_US
dc.subjectSource materialen_US
dc.subjectStructural and optical propertiesen_US
dc.subjectTriethyl galliumsen_US
dc.subjectTrimethylgalliumen_US
dc.subjectX ray photoelectron spectroscopyen_US
dc.titleComparison of trimethylgallium and triethylgallium as "ga" source materials for the growth of ultrathin GaN films on Si (100) substrates via hollow-cathode plasma-assisted atomic layer depositionen_US
dc.typeArticleen_US

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