Statistics for Comparison of trimethylgallium and triethylgallium as "ga" source materials for the growth of ultrathin GaN films on Si (100) substrates via hollow-cathode plasma-assisted atomic layer deposition
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Comparison_of_trimethylgallium_and_triethylgallium_as_ga_source_materials_for_the_growth_of_ultrathin_GaN_films_on_Si_(100)_substrates_via_hollow-cathode_plasma-assisted_atomic_layer_deposition.pdf | 8 |