Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (11 2-2) semipolar versus (0001) polar planes

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buir.contributor.authorDemir, Hilmi Volkan
buir.contributor.orcidDemir, Hilmi Volkan|0000-0003-1793-112X
dc.citation.epage143506-5en_US
dc.citation.issueNumber14en_US
dc.citation.spage143506-1en_US
dc.citation.volumeNumber104en_US
dc.contributor.authorJi Y.en_US
dc.contributor.authorLiu W.en_US
dc.contributor.authorErdem, T.en_US
dc.contributor.authorChen R.en_US
dc.contributor.authorTan S.T.en_US
dc.contributor.authorZhang Z.-H.en_US
dc.contributor.authorJu, Z.en_US
dc.contributor.authorZhang X.en_US
dc.contributor.authorSun, H.en_US
dc.contributor.authorSun, X. W.en_US
dc.contributor.authorZhao Y.en_US
dc.contributor.authorDenBaars, S. P.en_US
dc.contributor.authorNakamura, S.en_US
dc.contributor.authorDemir, Hilmi Volkanen_US
dc.date.accessioned2015-07-28T12:03:15Z
dc.date.available2015-07-28T12:03:15Z
dc.date.issued2014en_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.description.abstractThe characteristics of electroluminescence (EL) and photoluminescence (PL) emission from GaN light-emitting diodes (LEDs) grown on (11 (2) over bar2) semipolar plane and (0001) polar plane have been comparatively investigated. Through different bias-dependent shifting trends observed from the PL and time-resolved PL spectra (TRPL) for the two types of LEDs, the carrier dynamics within the multiple quantum wells (MQWs) region is systematically analyzed and the distinct field-dependent emission kinetics are revealed. Moreover, the polarization induced internal electric field has been deduced for each of the LEDs. The relatively stable emission behavior observed in the semipolar LED is attributed to the smaller polarization induced internal electric field. The study provides meaningful insight for the design of quantum well (QW) structures with high radiative recombination rates.en_US
dc.description.provenanceMade available in DSpace on 2015-07-28T12:03:15Z (GMT). No. of bitstreams: 1 HV6.pdf: 1181264 bytes, checksum: 8dfa5f8c262e56a29c8b130990a02695 (MD5)en
dc.identifier.doi10.1063/1.4870840en_US
dc.identifier.eissn1077-3118
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/11693/12814
dc.language.isoEnglishen_US
dc.publisherAIP Publishingen_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.4870840en_US
dc.source.titleApplied Physics Lettersen_US
dc.subjectElectric Fieldsen_US
dc.subjectElectroluminescenceen_US
dc.subjectPolarizationen_US
dc.subjectSemiconductor Quantum Wellsen_US
dc.subjectComparative Studiesen_US
dc.subjectGan Light-emitting Diodesen_US
dc.subjectInternal Electric Fieldsen_US
dc.subjectPhotoluminescence Emissionen_US
dc.subjectRadiative Recombination Rateen_US
dc.subjectStable Emissionsen_US
dc.subjectTime-resolved Pl Spectraen_US
dc.subjectLight Emitting Diodesen_US
dc.subjectCarrier Dynamicsen_US
dc.titleComparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (11 2-2) semipolar versus (0001) polar planesen_US
dc.typeArticleen_US

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