Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (11 2-2) semipolar versus (0001) polar planes

Date
2014
Advisor
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Source Title
Applied Physics Letters
Print ISSN
0003-6951
Electronic ISSN
1077-3118
Publisher
AIP Publishing
Volume
104
Issue
14
Pages
143506-1 - 143506-5
Language
English
Type
Article
Journal Title
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Abstract

The characteristics of electroluminescence (EL) and photoluminescence (PL) emission from GaN light-emitting diodes (LEDs) grown on (11 (2) over bar2) semipolar plane and (0001) polar plane have been comparatively investigated. Through different bias-dependent shifting trends observed from the PL and time-resolved PL spectra (TRPL) for the two types of LEDs, the carrier dynamics within the multiple quantum wells (MQWs) region is systematically analyzed and the distinct field-dependent emission kinetics are revealed. Moreover, the polarization induced internal electric field has been deduced for each of the LEDs. The relatively stable emission behavior observed in the semipolar LED is attributed to the smaller polarization induced internal electric field. The study provides meaningful insight for the design of quantum well (QW) structures with high radiative recombination rates.

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Keywords
Electric Fields, Electroluminescence, Polarization, Semiconductor Quantum Wells, Comparative Studies, Gan Light-emitting Diodes, Internal Electric Fields, Photoluminescence Emission, Radiative Recombination Rate, Stable Emissions, Time-resolved Pl Spectra, Light Emitting Diodes, Carrier Dynamics
Citation
Published Version (Please cite this version)