Design, fabrication and characterization of high-performance solarblind AlGaN photodetectors
buir.contributor.orcid | Özbay, Ekmel|0000-0003-2953-1828 | |
dc.citation.volumeNumber | 6013 | en_US |
dc.contributor.author | Özbay, Ekmel | en_US |
dc.coverage.spatial | Boston, MA, United States | en_US |
dc.date.accessioned | 2016-02-08T11:51:17Z | |
dc.date.available | 2016-02-08T11:51:17Z | |
dc.date.issued | 2005 | en_US |
dc.department | Institute of Materials Science and Nanotechnology (UNAM) | en_US |
dc.description | Conference name: Proceedings of SPIE, Optoelectronic Devices: Physics, Fabrication, and Application II | en_US |
dc.description | Date of Conference: 23-26 October 2005 | en_US |
dc.description.abstract | Design, fabrication, and characterization of high-performance AlxGal-xN-based photodetectors for solar-blind applications are reported. AlxGal-xN heterostructures were designed for Schottky, p-i-n, and metal-semiconductor-metal (MSM) photodiodes. The resulting solar-blind AlGaN detectors exhibited low dark current, high detectivity, and high bandwidth. | en_US |
dc.description.provenance | Made available in DSpace on 2016-02-08T11:51:17Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2005 | en |
dc.identifier.doi | 10.1117/12.630086 | en_US |
dc.identifier.issn | 0277-786X | |
dc.identifier.uri | http://hdl.handle.net/11693/27354 | |
dc.language.iso | English | en_US |
dc.publisher | SPIE | en_US |
dc.relation.isversionof | http://dx.doi.org/10.1117/12.630086 | en_US |
dc.source.title | Proceedings of SPIE | en_US |
dc.subject | AlGaN | en_US |
dc.subject | Detectivity | en_US |
dc.subject | Heterostructure | en_US |
dc.subject | High-speed | en_US |
dc.subject | MSM | en_US |
dc.subject | p-i-n | en_US |
dc.subject | Photodetector | en_US |
dc.subject | Schottky | en_US |
dc.subject | Solar-blind | en_US |
dc.subject | UV | en_US |
dc.subject | Bandwidth | en_US |
dc.subject | Design | en_US |
dc.subject | Fabrication | en_US |
dc.subject | Heterojunctions | en_US |
dc.subject | Schottky barrier diodes | en_US |
dc.subject | Semiconductor metal boundaries | en_US |
dc.subject | Ultraviolet detectors | en_US |
dc.subject | AlGaN | en_US |
dc.subject | Detectivity | en_US |
dc.subject | High-speed | en_US |
dc.subject | Metal-semiconductor-metal | en_US |
dc.subject | Solar-blind | en_US |
dc.subject | Photodetectors | en_US |
dc.title | Design, fabrication and characterization of high-performance solarblind AlGaN photodetectors | en_US |
dc.type | Conference Paper | en_US |
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