Design, fabrication and characterization of high-performance solarblind AlGaN photodetectors
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2005
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Abstract
Design, fabrication, and characterization of high-performance AlxGal-xN-based photodetectors for solar-blind applications are reported. AlxGal-xN heterostructures were designed for Schottky, p-i-n, and metal-semiconductor-metal (MSM) photodiodes. The resulting solar-blind AlGaN detectors exhibited low dark current, high detectivity, and high bandwidth.
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Proceedings of SPIE
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SPIE
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AlGaN, Detectivity, Heterostructure, High-speed, MSM, p-i-n, Photodetector, Schottky, Solar-blind, UV, Bandwidth, Design, Fabrication, Heterojunctions, Schottky barrier diodes, Semiconductor metal boundaries, Ultraviolet detectors, AlGaN, Detectivity, High-speed, Metal-semiconductor-metal, Solar-blind, Photodetectors
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English