Design, fabrication and characterization of high-performance solarblind AlGaN photodetectors
Date
2005
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Source Title
Proceedings of SPIE
Print ISSN
0277-786X
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SPIE
Volume
6013
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Language
English
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Abstract
Design, fabrication, and characterization of high-performance AlxGal-xN-based photodetectors for solar-blind applications are reported. AlxGal-xN heterostructures were designed for Schottky, p-i-n, and metal-semiconductor-metal (MSM) photodiodes. The resulting solar-blind AlGaN detectors exhibited low dark current, high detectivity, and high bandwidth.
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Keywords
AlGaN , Detectivity , Heterostructure , High-speed , MSM , p-i-n , Photodetector , Schottky , Solar-blind , UV , Bandwidth , Design , Fabrication , Heterojunctions , Schottky barrier diodes , Semiconductor metal boundaries , Ultraviolet detectors , AlGaN , Detectivity , High-speed , Metal-semiconductor-metal , Solar-blind , Photodetectors