Fabrication and characterisation of solar-blind Al0.6Ga0.4N MSM photodetectors

buir.contributor.authorÖzbay, Ekmel
buir.contributor.authorBıyıklı, Necmi
buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage275en_US
dc.citation.issueNumber5en_US
dc.citation.spage274en_US
dc.citation.volumeNumber41en_US
dc.contributor.authorBıyıklı, Necmien_US
dc.contributor.authorKimukin, I.en_US
dc.contributor.authorTut, T.en_US
dc.contributor.authorAytur, O.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2016-02-08T10:23:57Z
dc.date.available2016-02-08T10:23:57Z
dc.date.issued2005en_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.description.abstractSolar-blind metal-semiconductor-metal (MSM) photodiodes based on MOCVD-grown Al0.6Ga0.4N template have been fabricated and tested. AlGaN detector samples were fabricated using a microwave compatible fabrication process. Optical transmission, current-voltage, spectral responsivity, and temporal pulse response measurements were carried out. The fabricated devices had very low leakage current and displayed true solar-blind response with ∼255 nm cutoff wavelength.en_US
dc.identifier.doi10.1049/el:20048028en_US
dc.identifier.eissn1350-911X
dc.identifier.issn0013-5194
dc.identifier.urihttp://hdl.handle.net/11693/24090
dc.language.isoEnglishen_US
dc.publisherThe Institution of Engineering and Technologyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1049/el:20048028en_US
dc.source.titleElectronics Lettersen_US
dc.subjectMicrowavesen_US
dc.titleFabrication and characterisation of solar-blind Al0.6Ga0.4N MSM photodetectorsen_US
dc.typeArticleen_US
relation.isAuthorOfPublication8c1d6866-696d-46a3-a77d-5da690629296

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