Fabrication and characterisation of solar-blind Al0.6Ga0.4N MSM photodetectors

Date

2005

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Source Title

Electronics Letters

Print ISSN

0013-5194

Electronic ISSN

1350-911X

Publisher

The Institution of Engineering and Technology

Volume

41

Issue

5

Pages

274 - 275

Language

English

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Abstract

Solar-blind metal-semiconductor-metal (MSM) photodiodes based on MOCVD-grown Al0.6Ga0.4N template have been fabricated and tested. AlGaN detector samples were fabricated using a microwave compatible fabrication process. Optical transmission, current-voltage, spectral responsivity, and temporal pulse response measurements were carried out. The fabricated devices had very low leakage current and displayed true solar-blind response with ∼255 nm cutoff wavelength.

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