Silicon-Germanium multi-quantum well photodetectors in the near infrared

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buir.contributor.authorOkyay, Ali Kemal
dc.citation.epage7615en_US
dc.citation.issueNumber7en_US
dc.citation.spage7608en_US
dc.citation.volumeNumber20en_US
dc.contributor.authorOnaran, E.en_US
dc.contributor.authorOnbasli, M. C.en_US
dc.contributor.authorYesilyurt, A.en_US
dc.contributor.authorYu, H. Y.en_US
dc.contributor.authorNayfeh, A. M.en_US
dc.contributor.authorOkyay, Ali Kemalen_US
dc.date.accessioned2016-02-08T09:47:47Z
dc.date.available2016-02-08T09:47:47Z
dc.date.issued2012en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.description.abstractSingle crystal Silicon-Germanium multi-quantum well layers were epitaxially grown on silicon substrates. Very high quality films were achieved with high level of control utilizing recently developed MHAH epitaxial technique. MHAH growth technique facilitates the monolithic integration of photonic functionality such as modulators and photodetectors with low-cost silicon VLSI technology. Mesa structured p-i-n photodetectors were fabricated with low reverse leakage currents of ∼10 mA/cm2 and responsivity values exceeding 0.1 A/W. Moreover, the spectral responsivity of fabricated detectors can be tuned by applied voltage. © 2012 Optical Society of America.en_US
dc.description.provenanceMade available in DSpace on 2016-02-08T09:47:47Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2012en
dc.identifier.doi10.1364/OE.20.007608en_US
dc.identifier.issn10944087
dc.identifier.urihttp://hdl.handle.net/11693/21540
dc.language.isoEnglishen_US
dc.publisherOptical Society of American (OSA)en_US
dc.relation.isversionofhttp://dx.doi.org/10.1364/OE.20.007608en_US
dc.source.titleOptics Expressen_US
dc.subjectEpitaxial filmsen_US
dc.subjectEpitaxial growthen_US
dc.subjectLeakage currentsen_US
dc.subjectMonolithic integrated circuitsen_US
dc.subjectSingle crystalsen_US
dc.subjectApplied voltagesen_US
dc.subjectEpitaxial techniquesen_US
dc.subjectEpitaxially grownen_US
dc.subjectGrowth techniquesen_US
dc.subjectHigh-quality filmsen_US
dc.subjectMonolithic integrationen_US
dc.subjectMultiquantum wellsen_US
dc.subjectNear Infrareden_US
dc.subjectP-i-n photodetectorsen_US
dc.subjectResponsivityen_US
dc.subjectReverse leakage currenten_US
dc.subjectSilicon Germaniumen_US
dc.subjectSilicon substratesen_US
dc.subjectSpectral responsivityen_US
dc.subjectVLSI technologyen_US
dc.subjectPhotodetectorsen_US
dc.subjectgermaniumen_US
dc.subjectsiliconen_US
dc.subjectarticleen_US
dc.subjectchemistryen_US
dc.subjectequipmenten_US
dc.subjectequipment designen_US
dc.subjectinfrared radiationen_US
dc.subjectinstrumentationen_US
dc.subjectnear infrared spectroscopyen_US
dc.subjectphotometryen_US
dc.subjectradiation exposureen_US
dc.subjectEquipment Designen_US
dc.subjectEquipment Failure Analysisen_US
dc.subjectGermaniumen_US
dc.subjectInfrared Raysen_US
dc.subjectPhotometryen_US
dc.subjectSiliconen_US
dc.subjectSpectroscopy, Near-Infrareden_US
dc.titleSilicon-Germanium multi-quantum well photodetectors in the near infrareden_US
dc.typeArticleen_US

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