Investigation of thin films SiO2 obtained by low temperature plasmachemical deposition

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buir.contributor.authorSüzer, Şefik
buir.contributor.authorAydınlı, Atilla
dc.citation.epage56en_US
dc.citation.issueNumber14en_US
dc.citation.spage51en_US
dc.citation.volumeNumber20en_US
dc.contributor.authorTimofeev, F. N.en_US
dc.contributor.authorBozkurt, K.en_US
dc.contributor.authorGure, M.en_US
dc.contributor.authorAydınlı, Atillaen_US
dc.contributor.authorSüzer, Şefiken_US
dc.contributor.authorEllialtioglu, R.en_US
dc.contributor.authorTurkoglu, K.en_US
dc.date.accessioned2019-02-14T11:27:23Z
dc.date.available2019-02-14T11:27:23Z
dc.date.issued1994-07-26en_US
dc.departmentDepartment of Chemistryen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.description.provenanceSubmitted by Türkan Cesur (cturkan@bilkent.edu.tr) on 2019-02-14T11:27:23Z No. of bitstreams: 1 Investigation of thin films SiO2obtained by low temperature plasmachemical deposition.pdf: 1799305 bytes, checksum: b8aac7c03258f4a959d9042dec301e52 (MD5)en
dc.description.provenanceMade available in DSpace on 2019-02-14T11:27:23Z (GMT). No. of bitstreams: 1 Investigation of thin films SiO2obtained by low temperature plasmachemical deposition.pdf: 1799305 bytes, checksum: b8aac7c03258f4a959d9042dec301e52 (MD5) Previous issue date: 1994-07-26en
dc.identifier.issn0360-120X
dc.identifier.urihttp://hdl.handle.net/11693/49533
dc.language.isoRussianen_US
dc.publisherAmerican Institute of Physicsen_US
dc.source.titleSoviet Technical Physics Letters = Письма в Журнал Tехнической Физикиen_US
dc.titleInvestigation of thin films SiO2 obtained by low temperature plasmachemical depositionen_US
dc.title.alternativeИсследование тонких пленок SiO2, полученных методом низкотемпературного плазмохимического осажденияen_US
dc.typeArticleen_US

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