On the hole accelerator for III-nitride light-emitting diodes

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buir.contributor.authorDemir, Hilmi Volkan
buir.contributor.orcidDemir, Hilmi Volkan|0000-0003-1793-112X
dc.citation.issueNumber15en_US
dc.citation.volumeNumber108en_US
dc.contributor.authorZhang Z.-H.en_US
dc.contributor.authorZhang, Y.en_US
dc.contributor.authorBi, W.en_US
dc.contributor.authorGeng, C.en_US
dc.contributor.authorXu S.en_US
dc.contributor.authorDemir, Hilmi Volkanen_US
dc.contributor.authorSun, X. W.en_US
dc.date.accessioned2018-04-12T10:47:19Z
dc.date.available2018-04-12T10:47:19Z
dc.date.issued2016en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentDepartment of Physicsen_US
dc.description.abstractIn this work, we systematically conduct parametric studies revealing the sensitivity of the hole injection on the hole accelerator (a hole accelerator is made of the polarization mismatched p-electron blocking layer (EBL)/p-GaN/p-AlxGa1-xN heterojunction) with different designs, including the AlN composition in the p-AlxGa1-xN layer, and the thickness for the p-GaN layer and the p-AlxGa1-xN layer. According to our findings, the energy that the holes obtain does not monotonically increase as the AlN incorporation in the p-AlxGa1-xN layer increases. Meanwhile, with p-GaN layer or p-AlxGa1-xN layer thickening, the energy that the holes gain increases and then reaches a saturation level. Thus, the hole injection efficiency and the device efficiency are very sensitive to the p-EBL/p-GaN/p-AlxGa1-xN design, and the hole accelerator can effectively increase the hole injection if properly designed.en_US
dc.description.provenanceMade available in DSpace on 2018-04-12T10:47:19Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 179475 bytes, checksum: ea0bedeb05ac9ccfb983c327e155f0c2 (MD5) Previous issue date: 2016en
dc.identifier.doi10.1063/1.4947025en_US
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/11693/36655
dc.language.isoEnglishen_US
dc.publisherAmerican Institute of Physics Inc.en_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.4947025en_US
dc.source.titleApplied Physics Lettersen_US
dc.subjectAluminum nitrideen_US
dc.subjectCharge injectionen_US
dc.subjectElectron injectionen_US
dc.subjectGallium nitrideen_US
dc.subjectHeterojunctionsen_US
dc.subjectLight emitting diodesen_US
dc.subjectDevice efficiencyen_US
dc.subjectElectron blocking layeren_US
dc.subjectGaN layersen_US
dc.subjectHole injectionen_US
dc.subjectIII-Nitrideen_US
dc.subjectN layersen_US
dc.subjectParametric studyen_US
dc.subjectSaturation levelsen_US
dc.subjectAluminumen_US
dc.titleOn the hole accelerator for III-nitride light-emitting diodesen_US
dc.typeArticleen_US

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