Temperature-dependence of a GaN-based HEMT monolithic X-band low noise amplifier

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dc.citation.epage203en_US
dc.citation.spage201en_US
dc.contributor.authorSchwindt, R. S.en_US
dc.contributor.authorKumar, V.en_US
dc.contributor.authorAktaş, Ozanen_US
dc.contributor.authorLee, J.-W.en_US
dc.contributor.authorAdesida, I.en_US
dc.coverage.spatialMonterey, CA, USA
dc.date.accessioned2016-02-08T11:53:25Z
dc.date.available2016-02-08T11:53:25Z
dc.date.issued2004-10en_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentDepartment of Physicsen_US
dc.descriptionDate of Conference: 24-27 Oct. 2004
dc.descriptionConference name: IEEE Compound Semiconductor Integrated Circuit Symposium, 2004
dc.description.abstractThe temperature-dependent performance of a fully monolithic AlGaN/GaN HEMT-based X-band low noise amplifier is reported. The circuit demonstrated a noise figure of 3.5 dB, gain of 7.5 dB, input return loss of -7.5 dB, and output return loss of -15 dB at 8.5 GHz at room temperature. The noise figure at 9.5 GHz increased from 2.5 dB at 43°C to 5.0 dB at 150°C. © 2004 IEEE.en_US
dc.identifier.doi10.1109/CSICS.2004.1392536en_US
dc.identifier.issn1550-8781
dc.identifier.urihttp://hdl.handle.net/11693/27439
dc.language.isoEnglishen_US
dc.publisherIEEE
dc.relation.isversionofhttp://dx.doi.org/10.1109/CSICS.2004.1392536en_US
dc.source.titleTechnical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSICen_US
dc.subjectAmplifieren_US
dc.subjectGallium nitrideen_US
dc.subjectGaNen_US
dc.subjectHEMTen_US
dc.subjectLow noiseen_US
dc.subjectMMICen_US
dc.subjectSiCen_US
dc.subjectWide bandgapen_US
dc.subjectLow noise amplifier (LNA)en_US
dc.subjectOhmic metalen_US
dc.subjectSpiral inductorsen_US
dc.subjectWide bandgapen_US
dc.subjectAmplifiers (electronic)en_US
dc.subjectElectron mobilityen_US
dc.subjectGallium nitrideen_US
dc.subjectMonolithic microwave integrated circuitsen_US
dc.subjectRapid thermal annealingen_US
dc.subjectSemiconducting aluminum compoundsen_US
dc.subjectSilicon carbideen_US
dc.subjectTransmission line theoryen_US
dc.subjectHigh electron mobility transistorsen_US
dc.titleTemperature-dependence of a GaN-based HEMT monolithic X-band low noise amplifieren_US
dc.typeConference Paperen_US

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Department of Electrical and Electronics Engineering
Department of Physics
Institute of Materials Science and Nanotechnology (UNAM)