On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes

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buir.contributor.authorDemir, Hilmi Volkan
buir.contributor.orcidDemir, Hilmi Volkan|0000-0003-1793-112X
dc.citation.epage789en_US
dc.citation.issueNumber9en_US
dc.citation.spage779en_US
dc.citation.volumeNumber22en_US
dc.contributor.authorZhang, Z. H.en_US
dc.contributor.authorW. L.en_US
dc.contributor.authorTan, S. T.en_US
dc.contributor.authorJu, Z.en_US
dc.contributor.authorJi, Y.en_US
dc.contributor.authorKyaw, Z.en_US
dc.contributor.authorZhang, X.en_US
dc.contributor.authorHasanov, N.en_US
dc.contributor.authorZhu, B.en_US
dc.contributor.authorLu, S.en_US
dc.contributor.authorZhang, Y.en_US
dc.contributor.authorSun, X. W.en_US
dc.contributor.authorDemir, Hilmi Volkanen_US
dc.date.accessioned2015-07-28T12:03:18Z
dc.date.available2015-07-28T12:03:18Z
dc.date.issued2014en_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.description.abstractElectron overflow limits the quantum efficiency of InGaN/GaN light-emitting diodes. InGaN electron cooler (EC) can be inserted before growing InGaN/GaN multiple quantum wells (MQWs) to reduce electron overflow. However, detailed mechanisms of how the InGaN EC contributes to the efficiency improvement have remained unclear so far. In this work, we theoretically propose and experimentally demonstrate an electron mean-free-path model, which reveals the InGaN EC reduces the electron mean free path in MQWs, increases the electron capture rate and also reduces the valence band barrier heights of the MQWs, in turn promoting the hole transport into MQWs. (C) 2014 Optical Society of Americaen_US
dc.description.provenanceMade available in DSpace on 2015-07-28T12:03:18Z (GMT). No. of bitstreams: 1 HV19.pdf: 1098192 bytes, checksum: eb8239918d8e766c340ec30cf15085cf (MD5)en
dc.identifier.doi10.1364/OE.22.00A779en_US
dc.identifier.issn1094-4087
dc.identifier.urihttp://hdl.handle.net/11693/12828
dc.language.isoEnglishen_US
dc.publisherOptical Society of Americaen_US
dc.relation.isversionofhttp://dx.doi.org/10.1364/OE.22.00A779en_US
dc.source.titleOptics Expressen_US
dc.subjectCurrent-spreading Layeren_US
dc.subjectEfficiency-droopen_US
dc.subjectQuantum Barrieren_US
dc.subjectGanen_US
dc.subjectTransporten_US
dc.subjectModelen_US
dc.titleOn the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodesen_US
dc.typeArticleen_US

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