Ultrafast and highly efficient resonant cavity enhanced photodiodes
buir.contributor.author | Özbay, Ekmel | |
buir.contributor.author | Bıyıklı, Necmi | |
buir.contributor.orcid | Özbay, Ekmel|0000-0003-2953-1828 | |
dc.citation.epage | 399 | en_US |
dc.citation.spage | 389 | en_US |
dc.contributor.author | Özbay, Ekmel | en_US |
dc.contributor.author | Kimukin, İbrahim | en_US |
dc.contributor.author | Bıyıklı, Necmi | en_US |
dc.coverage.spatial | Orlando, Florida, United States | |
dc.date.accessioned | 2016-02-08T11:54:54Z | |
dc.date.available | 2016-02-08T11:54:54Z | |
dc.date.issued | 2003-09 | en_US |
dc.department | Department of Electrical and Electronics Engineering | en_US |
dc.department | Department of Physics | en_US |
dc.department | Institute of Materials Science and Nanotechnology (UNAM) | en_US |
dc.description | Date of Conference: 7-11 September, 2003 | |
dc.description | Conference name: ITCom 2003 | |
dc.description.abstract | In this talk, we will review our research efforts on resonant cavity enhanced (RCE) high-speed high-efficiency photodiodes (PDs) operating in the 1st and 3rd optical communication windows. Using a microwave compatible planar fabrication process, we have designed and fabricated GaAs and InGaAs based RCE photodiodes. For RCE GaAs Schottky type photodiodes, we have achieved peak quantum efficiencies of 50% and 75% with semi-transparent (Au) and transparent (indium-tin-oxide) Schottky layers respectively. Along with 3-dB bandwidths of 50 and 60 GHz, these devices exhibit bandwidth-efficiency (BWE) products of 25 GHz and 45 GHz respectively. By using a postprocess recess etch, we tuned the resonance wavelength of an RCE InGaAs PD from 1605 to 1558 nm while keeping the peak efficiencies above 60%. The maximum quantum efficiency was 66% at 1572 nm which was in good agreement with our theoretical calculations. The photodiode had a linear response up to 6 mW optical power, where we obtained 5 mA photocurrent at 3 V reverse bias. The photodetector had a temporal response of 16 psec at 7 V bias. After system response deconvolution, the 3-dB bandwidth of the device was 31 GHz, which corresponds to a bandwidth-efficiency product of 20 GHz. | en_US |
dc.description.provenance | Made available in DSpace on 2016-02-08T11:54:54Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2003 | en |
dc.identifier.doi | 10.1117/12.511202 | en_US |
dc.identifier.issn | 0277-786X | |
dc.identifier.uri | http://hdl.handle.net/11693/27493 | |
dc.language.iso | English | en_US |
dc.publisher | SPIE | en_US |
dc.relation.isversionof | http://dx.doi.org/10.1117/12.511202 | en_US |
dc.source.title | Proceedings of SPIE ITCOM 2003 - Active and Passive Optical Components for WDM Communications III | en_US |
dc.subject | P-i-n photodiode | en_US |
dc.subject | Quantum efficiency | en_US |
dc.subject | Schottky diode | en_US |
dc.subject | Bandwidth | en_US |
dc.subject | Cavity resonators | en_US |
dc.subject | Electric fields | en_US |
dc.subject | Frequency response | en_US |
dc.subject | Light absorption | en_US |
dc.subject | Light transmission | en_US |
dc.subject | Mirrors | en_US |
dc.subject | Optical communication | en_US |
dc.subject | Photocurrents | en_US |
dc.subject | Photodetectors | en_US |
dc.subject | Schottky barrier diodes | en_US |
dc.subject | Bandwidth-efficiency product | en_US |
dc.subject | High-speed photodetectors | en_US |
dc.subject | Resonant cavity enhancement | en_US |
dc.subject | Photodiodes | en_US |
dc.title | Ultrafast and highly efficient resonant cavity enhanced photodiodes | en_US |
dc.type | Conference Paper | en_US |
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