Ultrafast and highly efficient resonant cavity enhanced photodiodes

Date
2003-09
Advisor
Instructor
Source Title
Proceedings of SPIE ITCOM 2003 - Active and Passive Optical Components for WDM Communications III
Print ISSN
0277-786X
Electronic ISSN
Publisher
SPIE
Volume
Issue
Pages
389 - 399
Language
English
Type
Conference Paper
Journal Title
Journal ISSN
Volume Title
Abstract

In this talk, we will review our research efforts on resonant cavity enhanced (RCE) high-speed high-efficiency photodiodes (PDs) operating in the 1st and 3rd optical communication windows. Using a microwave compatible planar fabrication process, we have designed and fabricated GaAs and InGaAs based RCE photodiodes. For RCE GaAs Schottky type photodiodes, we have achieved peak quantum efficiencies of 50% and 75% with semi-transparent (Au) and transparent (indium-tin-oxide) Schottky layers respectively. Along with 3-dB bandwidths of 50 and 60 GHz, these devices exhibit bandwidth-efficiency (BWE) products of 25 GHz and 45 GHz respectively. By using a postprocess recess etch, we tuned the resonance wavelength of an RCE InGaAs PD from 1605 to 1558 nm while keeping the peak efficiencies above 60%. The maximum quantum efficiency was 66% at 1572 nm which was in good agreement with our theoretical calculations. The photodiode had a linear response up to 6 mW optical power, where we obtained 5 mA photocurrent at 3 V reverse bias. The photodetector had a temporal response of 16 psec at 7 V bias. After system response deconvolution, the 3-dB bandwidth of the device was 31 GHz, which corresponds to a bandwidth-efficiency product of 20 GHz.

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Keywords
P-i-n photodiode, Quantum efficiency, Schottky diode, Bandwidth, Cavity resonators, Electric fields, Frequency response, Light absorption, Light transmission, Mirrors, Optical communication, Photocurrents, Photodetectors, Schottky barrier diodes, Bandwidth-efficiency product, High-speed photodetectors, Resonant cavity enhancement, Photodiodes
Citation
Published Version (Please cite this version)