Piezoresistive silicon nanowire resonators as embedded building blocks in thick SOI

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buir.contributor.authorKarakan, M. Çağatay
buir.contributor.authorOrhan, Ezgi
buir.contributor.authorHanay, M. Selim
dc.citation.epage6en_US
dc.citation.issueNumber4en_US
dc.citation.spage1en_US
dc.citation.volumeNumber28en_US
dc.contributor.authorEsfahani, M. N.en_US
dc.contributor.authorKılınç, Y.en_US
dc.contributor.authorKarakan, M. Çağatayen_US
dc.contributor.authorOrhan, Ezgien_US
dc.contributor.authorHanay, M. Selimen_US
dc.contributor.authorLeblebici, Y.en_US
dc.contributor.authorAlaca, B. E.en_US
dc.date.accessioned2019-02-21T16:03:30Z
dc.date.available2019-02-21T16:03:30Z
dc.date.issued2018en_US
dc.departmentDepartment of Mechanical Engineeringen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.description.abstractThe use of silicon nanowire resonators in nanoelectromechanical systems for new-generation sensing and communication devices faces integration challenges with higher-order structures. Monolithic and deterministic integration of such nanowires with the surrounding microscale architecture within the same thick crystal is a critical aspect for the improvement of throughput, reliability and device functionality. A monolithic and IC-compatible technology based on a tuned combination of etching and protection processes was recently introduced yielding silicon nanowires within a 10 μm-thick device layer. Motivated by its success, the implications of the technology regarding the electromechanical resonance are studied within a particular setting, where the resonator is co-fabricated with all terminals and tuning electrodes. Frequency response is measured via piezoresistive readout with frequency down-mixing. Measurements indicate mechanical resonance with frequencies as high as 100 MHz exhibiting a Lorentzian behavior with proper transition to nonlinearity, while Allan deviation on the order of 3-8 ppm is achieved. Enabling the fabrication of silicon nanowires in thick silicon crystals using conventional semiconductor manufacturing, the present study thus demonstrates an alternative pathway to bottom-up and thin silicon-on-insulator approaches for silicon nanowire resonators.
dc.description.sponsorshipThe authors gratefully acknowledge the support by Tubitak under Grant no. 112E058. MNE was supported by the Tubitak-BIDEB 2216. This work was also supported by ISTKA under Grant TR10/16/YNY/0103 ‘Nanotechnology Platform for the Accessible and Sustainable Pilot Fabrication of High-Added-Value Products’.
dc.identifier.doi10.1088/1361-6439/aaab2f
dc.identifier.eissn1361-6439
dc.identifier.issn0960-1317
dc.identifier.urihttp://hdl.handle.net/11693/50111
dc.language.isoEnglish
dc.publisherInstitute of Physics Publishing
dc.relation.isversionofhttps://doi.org/10.1088/1361-6439/aaab2f
dc.relation.projectİstanbul Kalkınma Ajansı, ISTKA: TR10/16/YNY/0103
dc.source.titleJournal of Micromechanics and Microengineeringen_US
dc.subjectNanowire resonatoren_US
dc.subjectNEMSen_US
dc.subjectPiezoresistive readouten_US
dc.subjectSemiconductor manufacturingen_US
dc.subjectSilicon nanowireen_US
dc.subjectTop-down fabricationen_US
dc.titlePiezoresistive silicon nanowire resonators as embedded building blocks in thick SOIen_US
dc.typeArticleen_US

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