Electro-optic and electro-absorption characterization of InAs quantum dot waveguides
buir.contributor.author | Akca, İmran B. | |
buir.contributor.author | Dana, Aykutlu | |
buir.contributor.author | Aydınlı, Atilla | |
dc.citation.epage | 3444 | en_US |
dc.citation.issueNumber | 5 | en_US |
dc.citation.spage | 3439 | en_US |
dc.citation.volumeNumber | 16 | en_US |
dc.contributor.author | Akça, İmran B. | en_US |
dc.contributor.author | Dana, Aykutlu | en_US |
dc.contributor.author | Aydınlı, Atilla | en_US |
dc.contributor.author | Rossetti, M. | en_US |
dc.contributor.author | Li, L. | en_US |
dc.contributor.author | Fiore, A. | en_US |
dc.contributor.author | Dağlı, N. | en_US |
dc.date.accessioned | 2015-07-28T11:58:16Z | |
dc.date.available | 2015-07-28T11:58:16Z | |
dc.date.issued | 2008-03 | en_US |
dc.department | Institute of Materials Science and Nanotechnology (UNAM) | |
dc.department | Advanced Research Laboratories (ARL) | |
dc.department | Department of Physics | en_US |
dc.description.abstract | Abstract Optical properties of multilayer InAs quantum dot waveguides, grown by molecular beam epitaxy, have been studied under applied electric field. Fabry-Perot measurements at 1515 nm on InAs/GaAs quantum dot structures yield a significantly enhanced linear electro-optic efficiency compared to bulk GaAs. Electro-absorption measurements at 1300 nm showed increased absorption with applied field accompanied with red shift of the spectra. Spectral shifts of up to 21% under 18 Volt bias was observed at 1320 nm. (C) 2008 Optical Society of America. | en_US |
dc.description.provenance | Made available in DSpace on 2015-07-28T11:58:16Z (GMT). No. of bitstreams: 1 10.1364-OE.16.003439.pdf: 180097 bytes, checksum: e63f96035a6c4d7e73eb321720bf850d (MD5) | en |
dc.identifier.doi | 10.1364/OE.16.003439 | en_US |
dc.identifier.eisbn | 1094-4087 | |
dc.identifier.uri | http://hdl.handle.net/11693/11655 | |
dc.language.iso | English | en_US |
dc.publisher | Optical Society of America | en_US |
dc.relation.isversionof | http://dx.doi.org/10.1364/OE.16.003439 | en_US |
dc.source.title | Optics Express | en_US |
dc.subject | Well structures | en_US |
dc.subject | Coefficients | en_US |
dc.subject | Band | en_US |
dc.title | Electro-optic and electro-absorption characterization of InAs quantum dot waveguides | en_US |
dc.type | Article | en_US |
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