Electro-optic and electro-absorption characterization of InAs quantum dot waveguides

buir.contributor.authorAkca, İmran B.
buir.contributor.authorDana, Aykutlu
buir.contributor.authorAydınlı, Atilla
dc.citation.epage3444en_US
dc.citation.issueNumber5en_US
dc.citation.spage3439en_US
dc.citation.volumeNumber16en_US
dc.contributor.authorAkça, İmran B.en_US
dc.contributor.authorDana, Aykutluen_US
dc.contributor.authorAydınlı, Atillaen_US
dc.contributor.authorRossetti, M.en_US
dc.contributor.authorLi, L.en_US
dc.contributor.authorFiore, A.en_US
dc.contributor.authorDağlı, N.en_US
dc.date.accessioned2015-07-28T11:58:16Z
dc.date.available2015-07-28T11:58:16Z
dc.date.issued2008-03en_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)
dc.departmentAdvanced Research Laboratories (ARL)
dc.departmentDepartment of Physicsen_US
dc.description.abstractAbstract Optical properties of multilayer InAs quantum dot waveguides, grown by molecular beam epitaxy, have been studied under applied electric field. Fabry-Perot measurements at 1515 nm on InAs/GaAs quantum dot structures yield a significantly enhanced linear electro-optic efficiency compared to bulk GaAs. Electro-absorption measurements at 1300 nm showed increased absorption with applied field accompanied with red shift of the spectra. Spectral shifts of up to 21% under 18 Volt bias was observed at 1320 nm. (C) 2008 Optical Society of America.en_US
dc.identifier.doi10.1364/OE.16.003439en_US
dc.identifier.eisbn1094-4087
dc.identifier.urihttp://hdl.handle.net/11693/11655
dc.language.isoEnglishen_US
dc.publisherOptical Society of Americaen_US
dc.relation.isversionofhttp://dx.doi.org/10.1364/OE.16.003439en_US
dc.source.titleOptics Expressen_US
dc.subjectWell structuresen_US
dc.subjectCoefficientsen_US
dc.subjectBanden_US
dc.titleElectro-optic and electro-absorption characterization of InAs quantum dot waveguidesen_US
dc.typeArticleen_US

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