Electro-optic and electro-absorption characterization of InAs quantum dot waveguides
Date
2008-03
Editor(s)
Advisor
Supervisor
Co-Advisor
Co-Supervisor
Instructor
Source Title
Optics Express
Print ISSN
Electronic ISSN
Publisher
Optical Society of America
Volume
16
Issue
5
Pages
3439 - 3444
Language
English
Type
Journal Title
Journal ISSN
Volume Title
Series
Abstract
Abstract Optical properties of multilayer InAs quantum dot waveguides, grown by molecular beam epitaxy, have been studied under applied electric field. Fabry-Perot measurements at 1515 nm on InAs/GaAs quantum dot structures yield a significantly enhanced linear electro-optic efficiency compared to bulk GaAs. Electro-absorption measurements at 1300 nm showed increased absorption with applied field accompanied with red shift of the spectra. Spectral shifts of up to 21% under 18 Volt bias was observed at 1320 nm. (C) 2008 Optical Society of America.