Electro-optic and electro-absorption characterization of InAs quantum dot waveguides

Date
2008-03
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Source Title
Optics Express
Print ISSN
Electronic ISSN
Publisher
Optical Society of America
Volume
16
Issue
5
Pages
3439 - 3444
Language
English
Type
Article
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Abstract

Abstract Optical properties of multilayer InAs quantum dot waveguides, grown by molecular beam epitaxy, have been studied under applied electric field. Fabry-Perot measurements at 1515 nm on InAs/GaAs quantum dot structures yield a significantly enhanced linear electro-optic efficiency compared to bulk GaAs. Electro-absorption measurements at 1300 nm showed increased absorption with applied field accompanied with red shift of the spectra. Spectral shifts of up to 21% under 18 Volt bias was observed at 1320 nm. (C) 2008 Optical Society of America.

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Keywords
Well structures, Coefficients, Band
Citation
Published Version (Please cite this version)