InGaN/GaN light-emitting diode with a polarization tunnel junction

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buir.contributor.authorDemir, Hilmi Volkan
buir.contributor.orcidDemir, Hilmi Volkan|0000-0003-1793-112X
dc.citation.epage193508-5en_US
dc.citation.issueNumber19en_US
dc.citation.spage193508-1en_US
dc.citation.volumeNumber102en_US
dc.contributor.authorZhang Z.-H.en_US
dc.contributor.authorTan S.T.en_US
dc.contributor.authorKyaw, Z.en_US
dc.contributor.authorJi Y.en_US
dc.contributor.authorLiu W.en_US
dc.contributor.authorJu, Z.en_US
dc.contributor.authorHasanov N.en_US
dc.contributor.authorSun, X. W.en_US
dc.contributor.authorDemir, Hilmi Volkanen_US
dc.date.accessioned2015-07-28T12:00:12Z
dc.date.available2015-07-28T12:00:12Z
dc.date.issued2013en_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.description.abstractWe report InGaN/GaN light-emitting diodes (LED) comprising in situ integrated p(+)-GaN/InGaN/n(+)-GaN polarization tunnel junctions. Improved current spreading and carrier tunneling probability were obtained in the proposed device architecture, leading to the enhanced optical output power and external quantum efficiency. Compared to the reference InGaN/GaN LEDs using the conventional p(+)/n(+) tunnel junction, these devices having the polarization tunnel junction show a reduced forward bias, which is attributed to the polarization induced electric fields resulting from the in-plane biaxial compressive strain in the thin InGaN layer sandwiched between the p(+)-GaN and n(+)-GaN layers. (C) 2013 AIP Publishing LLC.en_US
dc.identifier.doi10.1063/1.4806978en_US
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/11693/12130
dc.language.isoEnglishen_US
dc.publisherAmerican Institute of Physicsen_US
dc.relation.isversionofhttp://dx.doi.org/ 10.1063/1.4806978en_US
dc.source.titleApplied Physics Lettersen_US
dc.subjectInternal Quantum Efficiencyen_US
dc.subjectCurrent-spreading Layeren_US
dc.subjectInjection Efficiencyen_US
dc.subjectContact Junctionsen_US
dc.subjectLasersen_US
dc.subjectAlganen_US
dc.subjectWellsen_US
dc.subjectPoweren_US
dc.titleInGaN/GaN light-emitting diode with a polarization tunnel junctionen_US
dc.typeArticleen_US

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