InGaN/GaN light-emitting diode with a polarization tunnel junction

Date
2013
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Source Title
Applied Physics Letters
Print ISSN
0003-6951
Electronic ISSN
Publisher
American Institute of Physics
Volume
102
Issue
19
Pages
193508-1 - 193508-5
Language
English
Type
Article
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Abstract

We report InGaN/GaN light-emitting diodes (LED) comprising in situ integrated p(+)-GaN/InGaN/n(+)-GaN polarization tunnel junctions. Improved current spreading and carrier tunneling probability were obtained in the proposed device architecture, leading to the enhanced optical output power and external quantum efficiency. Compared to the reference InGaN/GaN LEDs using the conventional p(+)/n(+) tunnel junction, these devices having the polarization tunnel junction show a reduced forward bias, which is attributed to the polarization induced electric fields resulting from the in-plane biaxial compressive strain in the thin InGaN layer sandwiched between the p(+)-GaN and n(+)-GaN layers. (C) 2013 AIP Publishing LLC.

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Keywords
Internal Quantum Efficiency, Current-spreading Layer, Injection Efficiency, Contact Junctions, Lasers, Algan, Wells, Power
Citation
Published Version (Please cite this version)