UV/vis range photodetectors based on thin film ALD grown ZnO/Si heterojunction diodes
buir.contributor.author | Okyay, Ali Kemal | |
dc.citation.issueNumber | 10 | en_US |
dc.citation.volumeNumber | 15 | en_US |
dc.contributor.author | Alkis, S. | en_US |
dc.contributor.author | Tekcan, B. | en_US |
dc.contributor.author | Nayfeh, A. | en_US |
dc.contributor.author | Okyay, Ali Kemal | en_US |
dc.date.accessioned | 2016-02-08T09:35:28Z | |
dc.date.available | 2016-02-08T09:35:28Z | |
dc.date.issued | 2013 | en_US |
dc.department | Department of Electrical and Electronics Engineering | en_US |
dc.department | Institute of Materials Science and Nanotechnology (UNAM) | en_US |
dc.description.abstract | We present ultraviolet-visible (UV/vis) range photodetectors (PDs) based on thin film ZnO (n)/Si (p) heterojunction diodes. ZnO films are grown by the atomic layer deposition (ALD) technique at growth temperatures of 80, 150, 200 and 250 ° C. The fabricated ZnO (n)/Si (p) photodetectors (ZnO-Si-PDs) show good electrical rectification characteristics with ON/OFF ratios reaching up to 103. Under UV (350 nm wavelength) and visible (475 nm wavelength) light illumination, the ZnO-Si-PDs give photoresponsivity values of 30-37 mA W-1 and 74-80 mA W-1 at 0.5 V reverse bias, respectively. Photoluminescence (PL) spectra of ALD grown ZnO thin films are used to support the results. | en_US |
dc.identifier.doi | 10.1088/2040-8978/15/10/105002 | en_US |
dc.identifier.issn | 2040-8978 | |
dc.identifier.uri | http://hdl.handle.net/11693/20799 | |
dc.language.iso | English | en_US |
dc.publisher | IOP Publishing | en_US |
dc.relation.isversionof | http://dx.doi.org/10.1088/2040-8978/15/10/105002 | en_US |
dc.source.title | Journal of Optics (United Kingdom) | en_US |
dc.subject | Atomic layer deposition | en_US |
dc.subject | Photodiodes | en_US |
dc.subject | Heterojunction diodes | en_US |
dc.subject | Light illumination | en_US |
dc.subject | On/off ratio | en_US |
dc.subject | Photodetectors (PDs) | en_US |
dc.subject | Photoluminescence spectrum | en_US |
dc.subject | Photoresponsivity | en_US |
dc.subject | ZnO | en_US |
dc.subject | ZnO thin film | en_US |
dc.subject | Deposition | en_US |
dc.subject | Electric rectifiers | en_US |
dc.subject | Heterojunctions | en_US |
dc.subject | Metallic films | en_US |
dc.title | UV/vis range photodetectors based on thin film ALD grown ZnO/Si heterojunction diodes | en_US |
dc.type | Article | en_US |
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