InGaN green light emitting diodes with deposited nanoparticles

buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidÖzbay, Ekmel|0000-0003-2953-1828
dc.citation.epage90en_US
dc.citation.issueNumber2-3en_US
dc.citation.spage86en_US
dc.citation.volumeNumber5en_US
dc.contributor.authorButun, B.en_US
dc.contributor.authorCesario J.en_US
dc.contributor.authorEnoch, S.en_US
dc.contributor.authorQuidant, R.en_US
dc.contributor.authorÖzbay, Ekmelen_US
dc.date.accessioned2016-02-08T10:12:49Z
dc.date.available2016-02-08T10:12:49Z
dc.date.issued2007en_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstractWe grew an InGaN/GaN-based light-emitting diode (LED) wafer by metal-organic chemical vapor deposition (MOCVD), fabricated devices by optical lithography, and successfully deposited ellipsoidal Ag nano-particles by way of e-beam lithography on top. The diodes exhibited good device performance, in which we expected an enhancement of the radiated intensity by the simulations and emission measurements. The obtained results showed the feasibility of plasmon-assisted LED emission enhancement.en_US
dc.identifier.doi10.1016/j.photonics.2007.07.005en_US
dc.identifier.eissn1569-4429
dc.identifier.issn1569-4410
dc.identifier.urihttp://hdl.handle.net/11693/23361
dc.language.isoEnglishen_US
dc.publisherElsevier BVen_US
dc.relation.isversionofhttps://doi.org/10.1016/j.photonics.2007.07.005en_US
dc.source.titlePhotonics and Nanostructures - Fundamentals and Applicationsen_US
dc.subjectGaNen_US
dc.subjectInGaNen_US
dc.subjectMOCVDen_US
dc.subjectLight-emitting diode (LED)en_US
dc.subjectNanoparticleen_US
dc.subjectSurface plasmonen_US
dc.subjectSilveren_US
dc.subjectFourier modal methoden_US
dc.subjectPlasmonen_US
dc.titleInGaN green light emitting diodes with deposited nanoparticlesen_US
dc.typeArticleen_US
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