InGaN green light emitting diodes with deposited nanoparticles

Date
2007
Advisor
Supervisor
Co-Advisor
Co-Supervisor
Instructor
Source Title
Photonics and Nanostructures - Fundamentals and Applications
Print ISSN
1569-4410
Electronic ISSN
1569-4429
Publisher
Elsevier BV
Volume
5
Issue
2-3
Pages
86 - 90
Language
English
Type
Article
Journal Title
Journal ISSN
Volume Title
Series
Abstract

We grew an InGaN/GaN-based light-emitting diode (LED) wafer by metal-organic chemical vapor deposition (MOCVD), fabricated devices by optical lithography, and successfully deposited ellipsoidal Ag nano-particles by way of e-beam lithography on top. The diodes exhibited good device performance, in which we expected an enhancement of the radiated intensity by the simulations and emission measurements. The obtained results showed the feasibility of plasmon-assisted LED emission enhancement.

Course
Other identifiers
Book Title
Keywords
GaN, InGaN, MOCVD, Light-emitting diode (LED), Nanoparticle, Surface plasmon, Silver, Fourier modal method, Plasmon
Citation
Published Version (Please cite this version)