InGaN green light emitting diodes with deposited nanoparticles

Files

InGaN green light emitting diodes with deposited nanoparticles.pdf (622.91 KB)

Date

2007

Authors

Editor(s)

Advisor

Supervisor

Co-Advisor

Co-Supervisor

Instructor

BUIR Usage Stats
2
views
12
downloads

Citation Stats

  • Share

Series

Abstract

We grew an InGaN/GaN-based light-emitting diode (LED) wafer by metal-organic chemical vapor deposition (MOCVD), fabricated devices by optical lithography, and successfully deposited ellipsoidal Ag nano-particles by way of e-beam lithography on top. The diodes exhibited good device performance, in which we expected an enhancement of the radiated intensity by the simulations and emission measurements. The obtained results showed the feasibility of plasmon-assisted LED emission enhancement.

Source Title

Photonics and Nanostructures - Fundamentals and Applications

Publisher

Elsevier BV

Course

Other identifiers

Book Title

Keywords

GaN, InGaN, MOCVD, Light-emitting diode (LED), Nanoparticle, Surface plasmon, Silver, Fourier modal method, Plasmon

Degree Discipline

Degree Level

Degree Name

Citation

Permalink

http://hdl.handle.net/11693/23361

Published Version (Please cite this version)

https://doi.org/10.1016/j.photonics.2007.07.005

Collections

Scholarly Publications - UNAM
Scholarly Publications - Electrical and Electronics Engineering
Scholarly Publications - NANOTAM
Scholarly Publications - Physics

Language

English

Type

Article