InGaN green light emitting diodes with deposited nanoparticles

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InGaN green light emitting diodes with deposited nanoparticles.pdf (622.91 KB)

Date

2007

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Source Title

Photonics and Nanostructures - Fundamentals and Applications

Print ISSN

1569-4410

Electronic ISSN

1569-4429

Publisher

Elsevier BV

Volume

5

Issue

2-3

Pages

86 - 90

Language

English

Type

Article

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Abstract

We grew an InGaN/GaN-based light-emitting diode (LED) wafer by metal-organic chemical vapor deposition (MOCVD), fabricated devices by optical lithography, and successfully deposited ellipsoidal Ag nano-particles by way of e-beam lithography on top. The diodes exhibited good device performance, in which we expected an enhancement of the radiated intensity by the simulations and emission measurements. The obtained results showed the feasibility of plasmon-assisted LED emission enhancement.

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Keywords

GaN, InGaN, MOCVD, Light-emitting diode (LED), Nanoparticle, Surface plasmon, Silver, Fourier modal method, Plasmon

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http://hdl.handle.net/11693/23361

Published Version (Please cite this version)

https://doi.org/10.1016/j.photonics.2007.07.005

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Scholarly Publications - UNAM
Scholarly Publications - Electrical and Electronics Engineering
Scholarly Publications - NANOTAM
Scholarly Publications - Physics