Modulation of multilayer InAs quantum dot waveguides under applied electric field

buir.contributor.authorAydınlı, Atilla
dc.contributor.authorAkça, Imran B.
dc.contributor.authorDana, Aykutlu
dc.contributor.authorAydınlı, Atilla
dc.contributor.authorRossetti, M.
dc.contributor.authorLi L.
dc.contributor.authorFiore, A.
dc.contributor.authorDagli, N.
dc.coverage.spatialSan Jose, California United States
dc.date.accessioned2016-02-08T11:45:29Z
dc.date.available2016-02-08T11:45:29Z
dc.date.issued2007
dc.departmentDepartment of Physics
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)
dc.descriptionConference name: Frontiers in Optics 2007
dc.descriptionDate of Conference: 16–20 September 2007
dc.description.abstractElectric field dependence of optical modulation in self assembled InAs quantum dot waveguides have been studied at 1300 and 1500 nm. Electro-absorption and electro-optic coefficients of these waveguides have been obtained at both wavelengths. © 2007 Optical Society of America.
dc.identifier.doi10.1364/FIO.2007.FMD3
dc.identifier.issn2162-2701
dc.identifier.urihttp://hdl.handle.net/11693/27132
dc.language.isoEnglish
dc.publisherOptical Society of America
dc.relation.isversionofhttps://doi.org/10.1364/FIO.2007.FMD3
dc.source.titleFrontiers in Optics 2007/Laser Science XXIII/Organic Materials and Devices for Displays and Energy Conversion
dc.subjectElectric fields
dc.subjectIndium arsenide
dc.subjectModulation
dc.subjectSemiconductor quantum dots
dc.subjectElectric field dependence
dc.subjectElectro optic coefficient
dc.subjectElectro-absorption
dc.subjectInAs quantum dots
dc.subjectSelf-assembled
dc.subjectWaveguides
dc.titleModulation of multilayer InAs quantum dot waveguides under applied electric field
dc.typeConference Paper

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