On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes

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buir.contributor.authorDemir, Hilmi Volkan
buir.contributor.orcidDemir, Hilmi Volkan|0000-0003-1793-112X
dc.citation.epage816en_US
dc.citation.issueNumber1en_US
dc.citation.spage809en_US
dc.citation.volumeNumber22en_US
dc.contributor.authorKyaw, Z.en_US
dc.contributor.authorZhang, Z. H.en_US
dc.contributor.authorLiu, W.en_US
dc.contributor.authorTan, S. T.en_US
dc.contributor.authorJu, Z. G.en_US
dc.contributor.authorZhang, X. L.en_US
dc.contributor.authorJi, Y.en_US
dc.contributor.authorHasanov, N.en_US
dc.contributor.authorZhu, B.en_US
dc.contributor.authorLu, S.en_US
dc.contributor.authorZhang, Y.en_US
dc.contributor.authorSun, X. W.en_US
dc.contributor.authorDemir, Hilmi Volkanen_US
dc.date.accessioned2015-07-28T12:03:18Z
dc.date.available2015-07-28T12:03:18Z
dc.date.issued2014-01-07en_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.description.abstractN-GaN/P-GaN/N-GaN/P-GaN/N-GaN (NPNPN-GaN) junctions embedded between the n-GaN region and multiple quantum wells (MQWs) are systematically studied both experimentally and theoretically to increase the performance of InGaN/GaN light emitting diodes (LEDs) in this work. In the proposed architecture, each thin P-GaN layer sandwiched in the NPNPN-GaN structure is completely depleted due to the built-in electric field in the NPNPN-GaN junctions, and the ionized acceptors in these P-GaN layers serve as the energy barriers for electrons from the n-GaN region, resulting in a reduced electron over flow and enhanced the current spreading horizontally in the n-GaN region. These lead to increased optical output power and external quantum efficiency (EQE) from the proposed device. (C) 2014 Optical Society of Americaen_US
dc.description.provenanceMade available in DSpace on 2015-07-28T12:03:18Z (GMT). No. of bitstreams: 1 HV17.pdf: 1133552 bytes, checksum: 6a8f438a9353a9cd2f6e0270247828ff (MD5)en
dc.identifier.doi10.1364/OE.22.000809en_US
dc.identifier.issn1094-4087
dc.identifier.urihttp://hdl.handle.net/11693/12826
dc.language.isoEnglishen_US
dc.publisherOptical Society of Americaen_US
dc.relation.isversionofhttp://dx.doi.org/10.1364/OE.22.000809en_US
dc.source.titleOptics Expressen_US
dc.subjectCurrent-spreading Layeren_US
dc.subjectP-type Ganen_US
dc.subjectEfficiency Droopen_US
dc.subjectOhmic Contactsen_US
dc.subjectAlganen_US
dc.subjectGrowthen_US
dc.titleOn the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodesen_US
dc.typeArticleen_US

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