Semiconductor-less photovoltaic device
buir.contributor.author | Okyay, Ali Kemal | |
buir.contributor.author | Bayındır, Mehmet | |
dc.citation.epage | 575 | en_US |
dc.citation.spage | 574 | en_US |
dc.contributor.author | Atar, Fatih B. | en_US |
dc.contributor.author | Battal, Enes | en_US |
dc.contributor.author | Aygun, Levent E. | en_US |
dc.contributor.author | Dağlar, Bihter | en_US |
dc.contributor.author | Bayındır, Mehmet | en_US |
dc.contributor.author | Okyay, Ali Kemal | en_US |
dc.coverage.spatial | Bellevue, WA, USA | en_US |
dc.date.accessioned | 2016-02-08T12:05:24Z | |
dc.date.available | 2016-02-08T12:05:24Z | |
dc.date.issued | 2013 | en_US |
dc.department | Department of Electrical and Electronics Engineering | en_US |
dc.department | Institute of Materials Science and Nanotechnology (UNAM) | en_US |
dc.description | Date of Conference: 8-12 Sept. 2013 | en_US |
dc.description.abstract | We demonstrate a novel semiconductor-less photovoltaic device and investigate the plasmonic effects on this device structure. The device is made of metal and dielectric layers and the operation is based on hot carrier collection. We present the use of surface plasmons to improve energy conversion efficiency. The field localization provided by surface plasmons confine the incident light in the metal layer, increasing the optical absorption and hot electron generation rate inside the metal layer. The device consists of two tandem MIM (metal-insulator-metal) junctions. Bottom MIM junction acts as a rectifying diode and top MIM junction is used to excite surface plasmons. The device operation principle as well as the topology will be discussed in detail. © 2013 IEEE. | en_US |
dc.description.provenance | Made available in DSpace on 2016-02-08T12:05:24Z (GMT). No. of bitstreams: 1 bilkent-research-paper.pdf: 70227 bytes, checksum: 26e812c6f5156f83f0e77b261a471b5a (MD5) Previous issue date: 2013 | en |
dc.identifier.doi | 10.1109/IPCon.2013.6656693 | en_US |
dc.identifier.uri | http://hdl.handle.net/11693/27924 | |
dc.language.iso | English | en_US |
dc.publisher | IEEE | en_US |
dc.relation.isversionof | http://dx.doi.org/10.1109/IPCon.2013.6656693 | en_US |
dc.source.title | 2013 IEEE Photonics Conference | en_US |
dc.subject | Hot electron | en_US |
dc.subject | metal-insulator-metal (MIM) | en_US |
dc.subject | photovoltaics | en_US |
dc.subject | surface plasmons | en_US |
dc.subject | Carrier collection | en_US |
dc.subject | Device operations | en_US |
dc.subject | Field localization | en_US |
dc.subject | Hot electron generation | en_US |
dc.subject | Metal insulator metals | en_US |
dc.subject | Photovoltaic devices | en_US |
dc.subject | Photovoltaics | en_US |
dc.subject | Surface plasmons | en_US |
dc.subject | Energy conversion | en_US |
dc.subject | Hot electrons | en_US |
dc.subject | Metal insulator boundaries | en_US |
dc.subject | Photonics | en_US |
dc.subject | Photovoltaic effects | en_US |
dc.subject | Plasmons | en_US |
dc.subject | Semiconductor junctions | en_US |
dc.subject | MIM devices | en_US |
dc.title | Semiconductor-less photovoltaic device | en_US |
dc.type | Conference Paper | en_US |
Files
Original bundle
1 - 1 of 1
Loading...
- Name:
- Semiconductor-less photovoltaic device.pdf
- Size:
- 293.89 KB
- Format:
- Adobe Portable Document Format
- Description:
- Full printable version