Semiconductor-less photovoltaic device

Date
2013
Advisor
Instructor
Source Title
2013 IEEE Photonics Conference
Print ISSN
Electronic ISSN
Publisher
IEEE
Volume
Issue
Pages
574 - 575
Language
English
Type
Conference Paper
Journal Title
Journal ISSN
Volume Title
Abstract

We demonstrate a novel semiconductor-less photovoltaic device and investigate the plasmonic effects on this device structure. The device is made of metal and dielectric layers and the operation is based on hot carrier collection. We present the use of surface plasmons to improve energy conversion efficiency. The field localization provided by surface plasmons confine the incident light in the metal layer, increasing the optical absorption and hot electron generation rate inside the metal layer. The device consists of two tandem MIM (metal-insulator-metal) junctions. Bottom MIM junction acts as a rectifying diode and top MIM junction is used to excite surface plasmons. The device operation principle as well as the topology will be discussed in detail. © 2013 IEEE.

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Book Title
Keywords
Hot electron, metal-insulator-metal (MIM), photovoltaics, surface plasmons, Carrier collection, Device operations, Field localization, Hot electron generation, Metal insulator metals, Photovoltaic devices, Photovoltaics, Surface plasmons, Energy conversion, Hot electrons, Metal insulator boundaries, Photonics, Photovoltaic effects, Plasmons, Semiconductor junctions, MIM devices
Citation
Published Version (Please cite this version)