Thin-film ZnO charge-trapping memory cell grown in a single ALD step

Date
2012-10-26
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Source Title
IEEE Electron Device Letters
Print ISSN
0741-3106
Electronic ISSN
Publisher
Institute of Electrical and Electronics Engineers
Volume
33
Issue
12
Pages
1714 - 1716
Language
English
Type
Article
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Abstract

A thin-film ZnO-based single-transistor memory cell with a gate stack deposited in a single atomic layer deposition step is demonstrated. Thin-film ZnO is used as channel material and charge-trapping layer for the first time. The extracted mobility and subthreshold slope of the thin-film device are 23 cm2/V · s and 720 mV/dec, respectively. The memory effect is verified by a 2.35-V hysteresis in the $I\rm drain- $V\rm gate curve. Physics-based TCAD simulations show very good agreement with the experimental results providing insight to the charge-trapping physics.

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Keywords
Atomic layer deposition (ALD), Flash memory, Thin-film transistor (TFT), ZnO, Channel materials, Charge trapping memories, Gate stacks, Memory cell, Memory effects, Physics-based, Subthreshold slope, TCAD simulation, Thin-film transistor (TFTs), ZnO, Atomic layer deposition, Flash memory, Semiconductor storage, Thin film devices, Zinc oxide, Thin film transistors
Citation
Published Version (Please cite this version)