Solution Processed Tungsten Oxide Interfacial Layer for Efficient Hole-Injection in Quantum Dot Light-Emitting Diodes

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buir.contributor.authorDemir, Hilmi Volkan
buir.contributor.orcidDemir, Hilmi Volkan|0000-0003-1793-112X
dc.citation.epage246en_US
dc.citation.issueNumber2en_US
dc.citation.spage246en_US
dc.citation.volumeNumber10en_US
dc.contributor.authorYang, X.en_US
dc.contributor.authorMutlugun, E.en_US
dc.contributor.authorZhao, Y.en_US
dc.contributor.authorGao, Y.en_US
dc.contributor.authorLeck, K. S.en_US
dc.contributor.authorMa, Y.en_US
dc.contributor.authorKe, L.en_US
dc.contributor.authorTan, S. T.en_US
dc.contributor.authorDemir, Hilmi Volkanen_US
dc.contributor.authorSun, X. W.en_US
dc.date.accessioned2015-07-28T12:00:43Z
dc.date.available2015-07-28T12:00:43Z
dc.date.issued2014en_US
dc.departmentDepartment of Physicsen_US
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.description.abstractA highly efficient and stable QLED using an inorganic WO3 nanoparticle film as a hole injection layer is demonstrated.The resulting WO3 nanoparticle-based QLEDs also exhibit superior performance compared to that of the present PEDOT:PSS-based QLEDs. The results indicate that WO3 nanoparticles are promising solution-processed buffer layer materials and serve as a strong candidate for QLED technology towards the practical applications in the next-generation lighting and displays. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.en_US
dc.identifier.doi10.1002/smll.201301199en_US
dc.identifier.issn1613-6810
dc.identifier.urihttp://hdl.handle.net/11693/12241
dc.language.isoEnglishen_US
dc.publisherWiley-VCH Verlagen_US
dc.relation.isversionofhttp://dx.doi.org/10.1002/smll.201301199en_US
dc.source.titleSmallen_US
dc.subjectInterfacial Layeren_US
dc.subjectLight-emitting Diodesen_US
dc.subjectNanoparticlesen_US
dc.subjectQuantum Dotsen_US
dc.subjectSolution Processingen_US
dc.subjectTungsten Oxideen_US
dc.titleSolution Processed Tungsten Oxide Interfacial Layer for Efficient Hole-Injection in Quantum Dot Light-Emitting Diodesen_US
dc.typeArticleen_US

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