Impact of the low temperature ohmic contact process on DC and forward gate bias stress operation of GaN HEMT devices

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buir.contributor.authorOdabaşı, Oğuz
buir.contributor.authorGhobadi, Amir
buir.contributor.authorGhobadi, Türkan Gamze Ulusoy
buir.contributor.authorÜnal, Yakup
buir.contributor.authorSalkım, Gurur
buir.contributor.authorBaşar, Güneş
buir.contributor.authorBütün, Bayram
buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidOdabaşı, Oğuz|0000-0002-2002-1488
buir.contributor.orcidGhobadi, Amir|0000-0002-8146-0361
buir.contributor.orcidGhobadi, Türkan Gamze Ulusoy|0000-0002-7669-1587
buir.contributor.orcidSalkım, Gurur|0000-0003-1044-2745
buir.contributor.orcidBütün, Bayram|0000-0003-0892-4681
buir.contributor.orcidÖzbay, Ekmel|0000-0002-9465-1044
dc.citation.epage1612en_US
dc.citation.issueNumber10en_US
dc.citation.spage1609en_US
dc.citation.volumeNumber43en_US
dc.contributor.authorOdabaşı, Oğuz
dc.contributor.authorGhobadi, Amir
dc.contributor.authorGhobadi, Türkan Gamze Ulusoy
dc.contributor.authorÜnal, Yakup
dc.contributor.authorSalkım, Gurur
dc.contributor.authorBaşar, Güneş
dc.contributor.authorBütün, Bayram
dc.contributor.authorÖzbay, Ekmel
dc.date.accessioned2023-02-28T12:21:58Z
dc.date.available2023-02-28T12:21:58Z
dc.date.issued2022-08-17
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentDepartment of Physicsen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstractIn AlGaN/GaN high electron mobility transistors (HEMTs), high temperature processes (such as ohmic annealing with >800°C value) could deform the crystal structure and induce trap states within the bulk and surface. Expanded defect densities cause crucial problems, such as threshold voltage ( Vth ) instability, current collapse, and high leakages. In this work, a low temperature ohmic contact process (630°C, 10 minutes) is adopted with recess etch, and contact resistances <0.1Ω ⋅ mm with low sheet resistances are achieved. The positive impact of this low thermal budget process on surface morphology, DC operation, long-term stability, and forward gate bias stress of the device is studied.en_US
dc.description.provenanceSubmitted by Ayça Nur Sezen (ayca.sezen@bilkent.edu.tr) on 2023-02-28T12:21:58Z No. of bitstreams: 1 Impact_of_the_low_temperature_ohmic_contact_process_on_DC_and_forward_gate_bias_stress_operation_of_GaN_HEMT_devices.pdf: 1038382 bytes, checksum: 78aa268cc9b0e917515424f9fe98149c (MD5)en
dc.description.provenanceMade available in DSpace on 2023-02-28T12:21:58Z (GMT). No. of bitstreams: 1 Impact_of_the_low_temperature_ohmic_contact_process_on_DC_and_forward_gate_bias_stress_operation_of_GaN_HEMT_devices.pdf: 1038382 bytes, checksum: 78aa268cc9b0e917515424f9fe98149c (MD5) Previous issue date: 2022-08-17en
dc.identifier.doi10.1109/LED.2022.3199569en_US
dc.identifier.eissn1558-0563
dc.identifier.issn0741-3106
dc.identifier.urihttp://hdl.handle.net/11693/111925
dc.language.isoEnglishen_US
dc.publisherInstitute of Electrical and Electronics Engineersen_US
dc.relation.isversionofhttps://doi.org/10.1109/LED.2022.3199569en_US
dc.source.titleIEEE Electron Device Lettersen_US
dc.subjectAlGaN/GaN HEMTsen_US
dc.subjectOhmic contacten_US
dc.subjectStabil15 ityen_US
dc.subjectSurface roughnessen_US
dc.subjectAnnealing temperaturesen_US
dc.subjectRecessed 16 ohmic contactsen_US
dc.titleImpact of the low temperature ohmic contact process on DC and forward gate bias stress operation of GaN HEMT devicesen_US
dc.typeArticleen_US

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