Impact of the low temperature ohmic contact process on DC and forward gate bias stress operation of GaN HEMT devices

buir.contributor.authorOdabaşı, Oğuz
buir.contributor.authorGhobadi, Amir
buir.contributor.authorGhobadi, Türkan Gamze Ulusoy
buir.contributor.authorÜnal, Yakup
buir.contributor.authorSalkım, Gurur
buir.contributor.authorBaşar, Güneş
buir.contributor.authorBütün, Bayram
buir.contributor.authorÖzbay, Ekmel
buir.contributor.orcidOdabaşı, Oğuz|0000-0002-2002-1488
buir.contributor.orcidGhobadi, Amir|0000-0002-8146-0361
buir.contributor.orcidGhobadi, Türkan Gamze Ulusoy|0000-0002-7669-1587
buir.contributor.orcidSalkım, Gurur|0000-0003-1044-2745
buir.contributor.orcidBütün, Bayram|0000-0003-0892-4681
buir.contributor.orcidÖzbay, Ekmel|0000-0002-9465-1044
dc.citation.epage1612en_US
dc.citation.issueNumber10en_US
dc.citation.spage1609en_US
dc.citation.volumeNumber43en_US
dc.contributor.authorOdabaşı, Oğuz
dc.contributor.authorGhobadi, Amir
dc.contributor.authorGhobadi, Türkan Gamze Ulusoy
dc.contributor.authorÜnal, Yakup
dc.contributor.authorSalkım, Gurur
dc.contributor.authorBaşar, Güneş
dc.contributor.authorBütün, Bayram
dc.contributor.authorÖzbay, Ekmel
dc.date.accessioned2023-02-28T12:21:58Z
dc.date.available2023-02-28T12:21:58Z
dc.date.issued2022-08-17
dc.departmentDepartment of Electrical and Electronics Engineeringen_US
dc.departmentDepartment of Physicsen_US
dc.departmentInstitute of Materials Science and Nanotechnology (UNAM)en_US
dc.departmentNanotechnology Research Center (NANOTAM)en_US
dc.description.abstractIn AlGaN/GaN high electron mobility transistors (HEMTs), high temperature processes (such as ohmic annealing with >800°C value) could deform the crystal structure and induce trap states within the bulk and surface. Expanded defect densities cause crucial problems, such as threshold voltage ( Vth ) instability, current collapse, and high leakages. In this work, a low temperature ohmic contact process (630°C, 10 minutes) is adopted with recess etch, and contact resistances <0.1Ω ⋅ mm with low sheet resistances are achieved. The positive impact of this low thermal budget process on surface morphology, DC operation, long-term stability, and forward gate bias stress of the device is studied.en_US
dc.identifier.doi10.1109/LED.2022.3199569en_US
dc.identifier.eissn1558-0563
dc.identifier.issn0741-3106
dc.identifier.urihttp://hdl.handle.net/11693/111925
dc.language.isoEnglishen_US
dc.publisherInstitute of Electrical and Electronics Engineersen_US
dc.relation.isversionofhttps://doi.org/10.1109/LED.2022.3199569en_US
dc.source.titleIEEE Electron Device Lettersen_US
dc.subjectAlGaN/GaN HEMTsen_US
dc.subjectOhmic contacten_US
dc.subjectStabil15 ityen_US
dc.subjectSurface roughnessen_US
dc.subjectAnnealing temperaturesen_US
dc.subjectRecessed 16 ohmic contactsen_US
dc.titleImpact of the low temperature ohmic contact process on DC and forward gate bias stress operation of GaN HEMT devicesen_US
dc.typeArticleen_US
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