Impact of the low temperature ohmic contact process on DC and forward gate bias stress operation of GaN HEMT devices

Date

2022-08-17

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Source Title

IEEE Electron Device Letters

Print ISSN

0741-3106

Electronic ISSN

1558-0563

Publisher

Institute of Electrical and Electronics Engineers

Volume

43

Issue

10

Pages

1609 - 1612

Language

English

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Abstract

In AlGaN/GaN high electron mobility transistors (HEMTs), high temperature processes (such as ohmic annealing with >800°C value) could deform the crystal structure and induce trap states within the bulk and surface. Expanded defect densities cause crucial problems, such as threshold voltage ( Vth ) instability, current collapse, and high leakages. In this work, a low temperature ohmic contact process (630°C, 10 minutes) is adopted with recess etch, and contact resistances <0.1Ω ⋅ mm with low sheet resistances are achieved. The positive impact of this low thermal budget process on surface morphology, DC operation, long-term stability, and forward gate bias stress of the device is studied.

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